8a 800v pdf Datasheet P10 Full Text Search --- IC-ON-LINE


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8a 800v Datasheet PDF File

For 8a 800v Found Datasheets File :: 859 Search Time::1.485ms
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				Sanyo Electric Co., Ltd. SANYO[Sanyo Semicon Device]
Part No.	2SC5689
OCR Text	...stg tf VCE=5V, IC=1A VCE=5V, IC=8a IC=7.2A, IB=1.8a IC=7.2A, IB=1.8a IEC=8a IC=5A, IB1=1A, IB2=--2A IC=5A, IB1=1A, IB2=--2A 0.1 Conditions Ratings min 15 4 7 3 1.5 2.0 3.0 0.2 V V V s s typ max Unit Switching Time Test Circuit IB1 OUTPU...
Description	Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications 超高清晰度CRT显示器水平偏转输出应
File Size	29.23K / 4 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	2SD2624 0810
OCR Text	...EC =6A IC=2A, IB1=0.4A, IB2=--0.8a Ratings min typ max 2 0.3 Unit V s Switching Time Test Circuit PW=20s D.C.1% INPUT IB1 IB2 RB VR OUTPUT RL=100 + + 470F VCC=200V 50 100F VBE= --2V A 6 IC -- VCE 2.0 1.4A 1...
Description	NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications From old datasheet system
File Size	29.87K / 4 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FQA6N80
OCR Text	...5 , Starting TJ = 25C 3. ISD 5.8a, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2000 Fairchild Semiconductor International Rev. ...
Description	800v N-Channel MOSFET
File Size	675.97K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FQA8N80C
OCR Text	... 500 Crss 2 Note : ID = 8a 0 -1 10 0 10 0 10 1 0 10 20 30 40 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristic...
Description	800v N-Channel Advance Q-FET C-Series 800v N-Channel MOSFET From old datasheet system
File Size	600.35K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FQAF6N80
OCR Text	...5 , Starting TJ = 25C 3. ISD 5.8a, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2000 Fairchild Semiconductor International Rev. ...
Description	800v N-Channel MOSFET
File Size	659.92K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor] http://
Part No.	FQB6N80 FQI6N80 FQB6N80TM
OCR Text	... TM Features * * * * * * 5.8a, 800v, RDS(on) = 1.95 @VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! 3 " " 5 ...
Description	800v N-Channel QFET 800v N-Channel MOSFET
File Size	682.20K / 9 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FQPF6N80
OCR Text	...5 , Starting TJ = 25C 3. ISD 5.8a, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2000 Fairchild Semiconductor International Rev. ...
Description	800v N-Channel MOSFET
File Size	664.64K / 8 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	IGW03N120H2NBSP IGP03N120H2NBSP IGB03N120H2NBSP IGB03N120H2 Q67040-S4599 IGP03N120H2 IGW03N120H2 Q67040-S4596 Q67040-S4598 IGB03N120H2E3045A
OCR Text	...ENT IC, COLLECTOR CURRENT 8a TC=80C 6A TC=110C 4A 10s 1A 50s 100s 0,1A 500s DC 2A Ic 100Hz 1kHz 10kHz 100kHz 0A 10Hz ,...800v, VGE = +15V/0V, RG = 82) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0...
Description	High Speed CMOS Logic Hex Non-Inverting Buffers 16-SOIC -55 to 125 高 -技 From old datasheet system HighSpeed 2-Technology IGBTs & DuoPacks - 3A 1200V HighSpeed2 IGBT TO247 IGBTs & DuoPacks - 3A 1200V HighSpeed2 IGBT TO220 IGBTs & DuoPacks - 3A 1200V HighSpeed2 IGBT D2Pak 1200V HighSpeed2 and 600V HighSpeed IGBT for switching frequency from 30kHz upwards. Focus applications: Lamp ballast, power supplies ...
File Size	393.63K / 13 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	IKW03N120H2 Q67040-S4597 IKB03N120H2 IKP03N120H2 Q67040-S4594 Q67040-S4595 IKB03N120H2E3045A INFINEONTECHNOLOGIESAG-Q67040-S4594
OCR Text	...ENT IC, COLLECTOR CURRENT 8a TC=80C 6A TC=110C 4A 10s 1A 50s 100s 0,1A 500s DC 2A Ic 100Hz 1kHz 10kHz 100kHz 0A 10Hz 0...800v, VGE = +15V/0V, RG = 82) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0...
Description	IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT D2Pak 1200V HighSpeed2 IGBT and 600V HighSpeed IGBT with antiparallel fast recovery EmCon™ diode in only one package. IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT TO247 IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT TO220 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode From old datasheet system
File Size	428.03K / 15 Page	View it Online	Download Datasheet

				STMicro
Part No.	S0802XH 3436
OCR Text	8a VDRM = 200V to 800v Low IGT < 200 A K A G DESCRIPTION The S0802xH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications where low gate sensitivity is required. TO...
Description	SENSITIVE GATE SCR From old datasheet system
File Size	60.41K / 5 Page	View it Online	Download Datasheet

For 8a 800v Found Datasheets File :: 859 Search Time::1.485ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |