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    RJF0611JPE-00-J3

Renesas Electronics Corporation
Part No. RJF0611JPE-00-J3
OCR Text 0000'>7 apr 13, 2012 target specifications datasheet rjf0611jpe silicon n channel mos fet series power switching description this fet ...00 apr 13, 2012 rjf0611jpe target specifications r00000'>7ds0582ej0200 rev.2.00 page 2 of 0000'>7 apr ...
Description Silicon N Channel MOS FET Series Power Switching

File Size 84.70K  /  8 Page

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    RJH60D1DPE-00-J3 RJH60D1DPE

Renesas Electronics Corporation
Part No. RJH60D1DPE-00-J3 RJH60D1DPE
OCR Text ... -- Typ -- -- -- 1.8 2.3 290 25 0000'>7.5 12.0 2.0 6.0 25 35 40 100 1.8 100 Max 100 1 6.0 2.2 -- -- -- -- -- -- -- -- -- -- -- 2.3 -- Unit A A V V...00 Oct 14, 2009 Page 2 of 3 RJH60D1DPE Preliminary Package Dimension Package Name LDPAK(S)...
Description 16 A, 600 V, N-CHANNEL IGBT SC-83, LDPAK-3
Silicon N Channel IGBT Application: Inverter

File Size 157.85K  /  4 Page

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    RJH60D2DPE-00-J3 RJH60D2DPE

NXP Semiconductors N.V.
Renesas Electronics Corporation
Part No. RJH60D2DPE-00-J3 RJH60D2DPE
OCR Text ... 2.49 0.2 0.2 0.1 + 0.1 - 0000'>7.8 0000'>7.0 2.2 1.30000'>7 0.2 1.3 0.2 2.54 0.5 0.3 3.0 + 0.5 - 0.2 0.86 + 0.1 - 0.4 0.1 2.54 0.5 Ordering Information Part No. RJH60D2DPE-00-J3 Quantity 1000 pcs Taping Shipping Container REJ...
Description 20 A, 600 V, N-CHANNEL IGBT SC-83, LDPAK-3
Silicon N Channel IGBT Application: Inverter

File Size 157.82K  /  4 Page

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    RJH60D3DPE-00-J3 RJH60D3DPE

Renesas Electronics Corporation
Part No. RJH60D3DPE-00-J3 RJH60D3DPE
OCR Text ...p -- -- -- 1.6 1.8 900 50 30 35 0000'>7 20 40 45 60 100 1.8 100 Max 100 1 6.0 2.2 -- -- -- -- -- -- -- -- -- -- -- 2.3 -- Unit A A V V V pF pF pF ...00 Oct 14, 2009 Page 2 of 3 RJH60D3DPE Preliminary Package Dimension Package Name LDPAK(S)...
Description 30 A, 600 V, N-CHANNEL IGBT SC-83, LDPAK-3
Silicon N Channel IGBT Application: Inverter

File Size 157.96K  /  4 Page

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    RJJ0621DPP-00-T2

Renesas Electronics Corporation
Part No. RJJ0621DPP-00-T2
OCR Text ...-- -- -- -- Typ. -- -- -- -- -1.0000'>7 45 65 1550 190 100 15 25 100 50 -0.9 Max. -- -1 0.1 -0.1 -2.5 56 95 -- -- -- -- -- -- -- -1.5 Unit V A A A...00 Jun 16, 2008 Page 2 of 6 RJJ0621DPP Main Characteristics Power vs. Temperature Derating 5...
Description P Channel Power MOS FET High Speed Switching

File Size 103.51K  /  7 Page

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    RJK0629DPE-00-J3 RJK0629DPE

Renesas Electronics Corporation
Part No. RJK0629DPE-00-J3 RJK0629DPE
OCR Text ...0V, ID= 43A, VGS = 10 V, RG = 4.0000'>7 IF = 85 A, VGS = 0 Note4 IF = 85 A, VGS = 0, diF/dt = 100 A/s REJ03G180000'>74-0100 Rev.1.00 Dec 15, 2009 Page 2 of 6 RJK0629DPE Preliminary Main Characteristics Power vs. Temperature Derating 2...
Description N Channel Power MOS FET High-Speed Switching Use

File Size 109.15K  /  7 Page

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    RJK1021DPE-00-J3 RJK1021DPE

Renesas Electronics Corporation
Part No. RJK1021DPE-00-J3 RJK1021DPE
OCR Text ... 2.49 0.2 0.2 0.1 + 0.1 - 0000'>7.8 0000'>7.0 2.2 1.30000'>7 0.2 1.3 0.2 2.54 0.5 0.3 3.0 + 0.5 - 0.2 0.86 + 0.1 - 0.4 0.1 2.54 0.5 Ordering Information Part No. RJK1021DPE-00-J3 Quantity 1000 pcs Taping Shipping Container REJ...
Description 0000'>70 A, 100 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET SC-83, LDPAK-3
N-Channel Power MOSFET High-Speed Switching Use

File Size 101.21K  /  7 Page

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    RJK2006DPE-00-J3 RJK2006DPJ09

Renesas Electronics Corporation
Part No. RJK2006DPE-00-J3 RJK2006DPJ09
OCR Text ...Rev.2.00 Nov 19, 2009 Page 1 of 0000'>7 RJK2006DPJ, RJK2006DPE, RJK2006DPF Electrical Characteristics (Ta = 25C) Item Drain to Source breakdown voltage Zero Gate voltage drain current Gate to Source leak current Gate to Source cutoff volt...
Description Silicon N Channel MOS FET High Speed Power Switching

File Size 116.47K  /  8 Page

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    RJK2017DPE-00-J3 RJK2017DPE

Renesas Electronics Corporation
Part No. RJK2010000'>7DPE-00-J3 RJK2010000'>7DPE
OCR Text ... 2.49 0.2 0.2 0.1 + 0.1 - 0000'>7.8 0000'>7.0 2.2 1.30000'>7 0.2 1.3 0.2 2.54 0.5 0.3 3.0 + 0.5 - 0.2 0.86 + 0.1 - 0.4 0.1 2.54 0.5 Ordering Information Part No. RJK2010000'>7DPE-00-J3 Quantity 1000 pcs Taping Shipping Container REJ...
Description Silicon N Channel MOS FET High Speed Power Switching

File Size 103.61K  /  7 Page

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    CLY32-00 CLY32-05 CLY32-10 CLY32

INFINEON[Infineon Technologies AG]
Part No. CLY32-00 CLY32-05 CLY32-10 CLY32
OCR Text ...9 V 2.5 at VDS 8 V 3.5 at VDS 0000'>7 V Unit V V V mA mA dB Compression Level 2) Operation Range 2 Compression Level 3) Operation Range 3 ...00 CLY32-05 CLY32-10 Output power at 1dB gain compr. 1) VDS = 9 V, ID(RF off) = 380 mA, f = 2.3 GHz ...
Description Standard Recovery Rectifier; Forward Current:25A; Forward Current Average:15.9A; Forward Current Avg Rectified, IF(AV):15.9A; Forward Surge Current Max, Ifsm:350A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes 伊雷尔C波段砷化镓功率场效应
HiRel C-Band GaAs Power-MESFET

File Size 554.40K  /  9 Page

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