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  4m 8m-bit Datasheet PDF File

For 4m 8m-bit Found Datasheets File :: 903    Search Time::1.781ms    
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    OKI
Part No. MSM6688L MSM6688 MSM6688_6688L
OCR Text ..., VDD 64 32 16 32M bits (max.) 4m bits (MSM6684B) 8M bits (MSM6685A) MSM6688L 2.7 to 3.6 V Microcontroller interface mode only 1 V to 3 V DD DD 4 4 VDD , VDD , VDD 128 64 32 4m bits (max.) 4m bits (MSM66V84B) 1/163 Semiconduct...
Description ADPCM Solid-State Recorder IC
From old datasheet system

File Size 1,360.52K  /  164 Page

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    SiS
Part No. SIS963 655
OCR Text ...RAM Timing support - Support 2M/4m/8M/16M TSEG SMRAM - Support Dynamic Bus Inversion. * DRAM Controller - Integrated Dual Memory Controller w/ 128bit mode and 64bitx2 concurrent access mode support - DDR333/DDR266Support - Support Up to...
Description Dual Channel DDR333 Plus AGP8X Cipset for Intel Pentium®4 Platform
From old datasheet system

File Size 1,337.50K  /  14 Page

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    hitachi
Part No. HB56D436BR_SBRSERIES 56D836
OCR Text ...ackage. The HB56D436BR/SBR is a 4m x 36 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM (HM5117400) sealed in SOJ package and 4 pieces of 4-Mbit DRAM (HM514100) sealed in SOJ package. An outline of the HB56D836BR/SBR, HB56D436BR/SBR is...
Description From old datasheet system

File Size 306.15K  /  24 Page

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    Samsung
Part No. K9F2808U0C
OCR Text ...F28XXU0C is 128M bit with spare 4m bit capacity. The device is offered in 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be perform ed in typical 200s on th...
Description IC,EEPROM,NAND FLASH,16MX8,CMOS,TSSOP,48PIN,PLASTIC
From old datasheet system

File Size 317.17K  /  32 Page

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    Fujitsu
Part No. MB98D811232MB E530337
OCR Text ...98D81123(2MB)/81223(4mB)-15 2M/4m-BYTE 3 V-ONLY FLASH MINIATURE CARD The Fujitsu Flash Miniature cards conform to "Miniature Card Specific...8M bit x 1 Address I/O R/B Internal circuit Internal circuit RESET# VCC VCC 100K 100K ...
Description 3V-ONLY FLASH MINIATURE CARD
From old datasheet system

File Size 250.17K  /  46 Page

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    K4S281632F-UC75 K4S280432F-UC K4S280832F-UC75 K4S280832F-UL75 K4S281632F-UL75 K4S280432F-UC75 K4S280432F-UL75 K4S281632F

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S281632F-UC75 K4S280432F-UC K4S280832F-UC75 K4S280832F-UL75 K4S281632F-UL75 K4S280432F-UC75 K4S280432F-UL75 K4S281632F-UC60 K4S281632F-UC60_75 K4S281632F-UL60 K4S281632F-UL60_75 K4S281632F-UC60/75 K4S281632F-UL60/75 K4S280432F-UC750 K4S281632F-UL750
OCR Text ... SDRAM 8M x 4Bit x 4 Banks / 4m x 8Bit x 4 Banks / 2M x 16Bit x 4 Banks SDRAM FEATURES * JEDEC standard 3.3V power supply * LVTTL compatible with multiplexed address * Four banks operation * MRS cycle with address key programs -. CAS l...
Description 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 128Mb的的F -模与铅SDRAM的规4 TSOP-II免费(符合RoHS
CAP 0.1UF 100V 10% X7R SMD-1206 TR-7-PL 3K/REEL

File Size 142.90K  /  14 Page

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    MR27V6402G

OKI electronic componet...
OKI[OKI electronic componets]
Part No. MR27V6402G
OCR Text 4m-Word x 16-Bit or 8M-Word x 8-Bit FEDR27V6402G-01-02 Issue Date: Jun. 4, 2003 OTP PIN CONFIGURATION (TOP VIEW) GENERAL DESCRIPTION The MR27V6402G is a 64 Mbit electrically One Time Programmable Read-Only Memory that can be ele...
Description 4m-Word x 16-Bit or 8M-Word x 8-Bit OTP
From old datasheet system
4m?Word ? 16?Bit or 8M?Word ? 8?Bit OTP
4mWord 16Bit or 8MWord 8Bit OTP

File Size 141.28K  /  14 Page

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    TC58FVM6B2AFT65 TC58FVM6B2AXB65 TC58FVM6T2AXB65 TC58FVM6T2AFT65 TC58FVM62A

TOSHIBA[Toshiba Semiconductor]
Part No. TC58FVM6B2AFT65 TC58FVM6B2AXB65 TC58FVM6T2AXB65 TC58FVM6T2AFT65 TC58FVM62A
OCR Text 4m x 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable f...8M x 8 bits/4m x 16 bits Functions Simultaneous Read/Write Page Read Auto Program, Auto Page Program...
Description TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

File Size 753.33K  /  61 Page

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    K4S561632E-UC75 K4S561632E-UL75 K4S561632E-UL60 K4S561632E-UC60 K4S560832E-UC75 K4S560832E-UL75 K4S560432E-UC K4S560432E

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S561632E-UC75 K4S561632E-UL75 K4S561632E-UL60 K4S561632E-UC60 K4S560832E-UC75 K4S560832E-UL75 K4S560432E-UC K4S560432E-UC75 K4S560432E-UL75
OCR Text ...4 Banks / 8M x 8Bit x 4 Banks / 4m x 16Bit x 4 Banks SDRAM FEATURES * JEDEC standard 3.3V power supply * LVTTL compatible with multiplexed address * Four banks operation * MRS cycle with address key programs -. CAS latency (2 & 3) -. Burs...
Description 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 256Mb的电子芯片与内存规格4 TSOP-II免费(符合RoHS

File Size 196.27K  /  14 Page

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    K7R643684M K7R641884M

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K7R643684m K7R641884m
OCR Text ...D-8D,5E-7E,6F,6G,6H,6J,6K,5L-7L,4m, 8M,4N,8N 10R 11R 2R 1R 6C DESCRIPTION Input Clock Input Clock for Output Data Output Echo Clock DLL Disable when low Address Inputs Data Inputs 1 NOTE Q0-35 W R BW0, BW1,BW2, BW3 VREF ZQ VDD VDDQ VSS T...
Description 2Mx36 & 4mx18 QDRTM II b4 SRAM

File Size 350.56K  /  18 Page

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