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  400v 25a Datasheet PDF File

For 400v 25a Found Datasheets File :: 1629    Search Time::1.328ms    
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    IXGH60N60B2 IXGT60N60B2

IXYS Corporation
Part No. IXGH60N60B2 IXGT60N60B2
OCR Text ...0 9 8 TJ = 125C VGE = 15V VCE = 400v I C = 100A Fig. 8. De pendence of Turn-Off Energy on RG E off - milliJoules g f s - Siemens ...25a 50 100 150 200 250 300 I C - Amperes Fig. 9. Depe nde nce of Turn-Off Ene r...
Description IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching

File Size 575.12K  /  5 Page

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    IRFF310

International Rectifier
Part No. IRFF310
OCR Text ...mary Part Number IRFF310 BVDSS 400v RDS(on) 3.6 ID 1.25a IRFF310 JANTX2N6786 JANTXV2N6786 REF:MIL-PRF-19500/556 400v, N-CHANNEL The HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transisto...
Description 400v Single N-Channel Hi-Rel MOSFET in a TO-205AF package

File Size 134.80K  /  8 Page

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    IRF[International Rectifier]
Part No. IRFF310 2476
OCR Text ...mary Part Number IRFF310 BVDSS 400v RDS(on) 3.6 ID 1.25a IRFF310 JANTX2N6786 JANTXV2N6786 REF:MIL-PRF-19500/556 400v, N-CHANNEL The HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transisto...
Description REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-205AF)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF)
From old datasheet system
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF)

File Size 128.27K  /  7 Page

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    SKP10N60A SKP10N60A08

Infineon Technologies AG
Infineon Technologies A...
Part No. SKP10N60A SKP10N60A08
OCR Text ...uency (Tj 150C, D = 0.5, VCE = 400v, VGE = 0/+15V, RG = 25) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C) 120W 25a 100W 20A 80W IC, COLLECTOR CURRENT POWER DISSIPATION 15A...
Description Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

File Size 363.09K  /  14 Page

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    IGB10N60T

Infineon Technologies AG
Part No. IGB10N60T
OCR Text ... 260 V s W C VGE = 15V, VCC 400v, Tj 150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering tempe...25a 20A 15A 10A 5A 0A 10H z T C =80C 10A 5s 20s IC, COLLECTOR CURRENT T C =110C IC, C...
Description Low Loss IGBT in TrenchStop and Fieldstop technology

File Size 775.89K  /  12 Page

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    HIROSE ELECTRIC Co., Ltd.
Part No. 6EP1434-2BA00 6EP1436-2BA00 6EP1437-2BA00 6EP1437-2BA10
OCR Text ...echselstromnetz nennspannungen 400v bis 500v, 50/60hz. ausgangsspannung +24v dc, potentialfrei, kurzschluss- und leerlauffest. technische d...25a, <1a 2 s vorzuschaltender 3ph. gekoppelter ls-schalter charakteristik c max. 25a. alternativ: vo...
Description PSU 24V 40A DIN RAIL
PSU 24V 10A DIN RAIL 电源24V0A条导
10-Port Constant-Current LED Drivers and I/O Expanders with PWM Intensity Control 电源24V0A条导

File Size 161.21K  /  8 Page

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    Fairchild Semiconductor, Corp.
Part No. FDPF5N50FT
OCR Text ...v, v gs = 0v - - 10 a v ds = 400v, t c = 125 o c - - 100 i gss gate to body leakage current v gs = 30v, v ds = 0v - - 100 na v gs(th...25a - 1.25 1.55 g fs forward transconductance v ds = 20v, i d = 2.25a (note 4...
Description 500V N-Channel MOSFET, FRFET; Package: TO-220F; No of Pins: 3; Container: Rail 4.5 A, 500 V, 1.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 421.49K  /  10 Page

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    FDPF5N50FT12 FDP5N50F12

Fairchild Semiconductor
Part No. FDPF5N50FT12 FDP5N50F12
OCR Text ...v, v gs = 0v - - 10 a v ds = 400v, t c = 125 o c - - 100 i gss gate to body leakage current v gs = 30v, v ds = 0v - - 100 na v gs(th...25a - 1.25 1.55 g fs forward transconductance v ds = 20v, i d = 2.25a (note 4...
Description N-Channel MOSFET, FRFET 500V, 4.5A, 1.55Ω

File Size 454.76K  /  10 Page

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