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INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N03S2L-03 SPB80N03S2L-03 SPI80N03S2L-03
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| OCR Text |
...ate voltage drain current
V DS=30v, VGS=0V, Tj=25C V DS=30v, VGS=0V, Tj=125C
A 0.01 1 1 1 100 100 nA m 2.9 2.3 2.3 2 3.8 3.5 3.1 2.8
...80a V GS=4.5V, I D=80a, SMD version
Drain-source on-state resistance 4)
V GS=10V, I D=80a V GS=1... |
| Description |
80 A, 30 V, 0.0038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PLASTIC, TO-220, 3 PIN
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30v, D2PAK, RDSon = 2.8mOhm, 80a, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30v, TO-220, RDSon = 3.1mOhm, 80a, LL 80 A; 30v; LL; 3,1 mOhm
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| File Size |
415.20K /
8 Page |
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SIEMENS AG
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| Part No. |
SPP80N06S2-05
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| OCR Text |
...-on delay time t d ( on ) v dd =30v, v gs =10v, i d =80a, r g =2.2 ? - 18 27 ns rise time t r - 126 190 turn-off delay time t d ( off ) - 54 80 fall time t f - 20 30 gate charge characteristics gate to source charge q g s v dd =44v, i ... |
| Description |
OptiMOS Power-Transistor( MOS 型功率晶体管)
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| File Size |
92.18K /
8 Page |
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it Online |
Download Datasheet |
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Infineon
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| Part No. |
SPB80N06S2-09
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| OCR Text |
...urn-on delay time t d(on) v dd =30v, v gs =10v, i d =80a, r g =4.7 - 14 21 ns rise time t r - 29 44 turn-off delay time t d(off) - 39 58 fall time t f - 28 42 gate charge characteristics gate to source charge q gs v dd =44v, i d =80a... |
| Description |
N-Channel OptiMOS Power Transistor
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| File Size |
517.37K /
8 Page |
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it Online |
Download Datasheet |
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FUJI[Fuji Electric]
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| Part No. |
2SK3270-01
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| OCR Text |
...60V Tch=25C VGS=0V Tch=125C VGS=30v VDS=0V ID=40A VGS=10V ID=40A VDS=10V VDS=25V VGS=0V f=1MHz VCC=30v VGS=10V ID=80a RGS=10 Tch=25C L = 100H IF=80a VGS=0V Tch=25C IF=50A VGS=0V -dIF/dt=100A/s Tch=25C
Min. 60 2,5
Typ. 3,0 1,0 10,0 10... |
| Description |
N-channel MOS-FET
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| File Size |
234.67K /
2 Page |
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it Online |
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Infineon
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| Part No. |
SPP80N06S2-07 SPB80N06S2-07
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| OCR Text |
...urn-on delay time t d(on) v dd =30v, v gs =10v, i d =80a, r g =3.3 - 16 24 ns rise time t r - 37 56 turn-off delay time t d(off) - 61 91 fall time t f - 36 54 gate charge characteristics gate to source charge q gs v dd =44v, i d =80a... |
| Description |
Low Voltage MOSFETs - TO220/263/262; 80a; 55V; NL; 6.6mOhm
N-Channel OptiMOS Power Transistor
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| File Size |
515.70K /
8 Page |
View
it Online |
Download Datasheet |
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SIEMENS AG
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| Part No. |
SPP80N06S2L-051
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| OCR Text |
...-on delay time t d ( on ) v dd =30v, v gs =4.5v, i d =80a, r g =1.3 ? - 25 38 ns rise time t r - 322 483 turn-off delay time t d ( off ) - 67 100 fall time t f - 90 135 gate charge characteristics gate to source charge q g s v dd =44v, ... |
| Description |
OptiMOS Power-Transistor( MOS 型功率晶体管)
OptiMOS Power-Transistor( MOS ??????浣??)
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| File Size |
93.04K /
8 Page |
View
it Online |
Download Datasheet |
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