3-300s pdf Datasheet P10 Full Text Search --- IC-ON-LINE

3-300s Datasheet PDF File

For 3-300s Found Datasheets File :: 11885 Search Time::2.672ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |

				ZETEX[Zetex Semiconductors]
Part No.	BSS138
OCR Text	3 - MARCH 1996 PARTMARKING DETAIL 7 - SS BSS138 S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain C...300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns ...
Description	N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
File Size	58.23K / 3 Page	View it Online	Download Datasheet

				Zetex Semiconductors Diodes Incorporated
Part No.	FZT1051A
OCR Text	... 5 9 V IE=100A 0.3 0.3 0.3 10 10 10 nA nA nA VCB=120V VEB=4V VCES=120V VCE(sat) 17 85 140 250 980 25 120 18...300s. Duty cycle 2% FZT1051A TYPICAL CHARACTERISTICS 1.0 +25C 1.0 IC/IB=100 0.8 0.8...
Description	NPN Low Sat Transistor NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR SOT223 NPN SILICON PLANAR
File Size	45.99K / 3 Page	View it Online	Download Datasheet

				ZETEX[Zetex Semiconductors] Diodes Incorporated
Part No.	FZT788 FZT788B FZT788BTA FZT788B-15
OCR Text	3 - OCTOBER 1995 FEATURES * Low equivalent on-resistance; RCE(sat) 93m at 3A * Gain of 300 at IC=2 Amps and Very low saturation voltage APPL...300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 244 FZT788...
Description	PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
File Size	80.19K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7389 IRF7389TR
OCR Text	...S 30V P-Ch -30V 2 7 3 6 4 5 P-CHANNEL MOSFET RDS(on) 0.029 0.058 Description Fifth Generation HEXFETs from In...300s; duty cycle 2%. max. junction temperature. ( See fig. 22 ) Surface mounted on FR-4 board, t ...
Description	Generation v technology 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
File Size	210.72K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7401 IRF7402 IRF7401TR
OCR Text	...A D D D D 2 VDSS = 20V 3 6 4 5 RDS(on) = 0.022 T o p V ie w Description Fifth Generation HEXFETs from Internatio...300s; duty cycle 2%. ISD 4.1A, di/dt 100A/s, VDD V(BR)DSS, TJ 150C Surface mounted on ...
Description	20V Single N-Channel HEXFET Power MOSFET in a SO-8 package HEXFET? Power MOSFET Power MOSFET(Vdss=20V, Rds(on)=0.022ohm) Power MOSFET(Vdss=20V/ Rds(on)=0.022ohm)
File Size	117.75K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7403 IRF7403TRPBF
OCR Text	... A A D D D D VDSS = 30V 3 6 4 5 RDS(on) = 0.022 T op V iew Description Fifth Generation HEXFETs from Internationa...300s; duty cycle 2%. I SD 4.0A, di/dt 180A/s, VDD V(BR)DSS, TJ 150C Surface mounted on...
Description	Generation V Technology Power MOSFET
File Size	112.84K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7404
OCR Text	... S S G 2 VDSS = -20V 3 6 4 5 RDS(on) = 0.040 To p V ie w Description Fifth Generation HEXFETs from Internation...300s; duty cycle 2%. ISD -3.2A, di/dt -65A/s, VDD V(BR)DSS, TJ 150C Surface mounted on...
Description	HEXFET Power MOSFET
File Size	159.41K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF740B IRFS740B IRF740
OCR Text	...d (Note 1) IRF740B 400 10 6.3 40 30 (Note 2) (Note 1) (Note 1) (Note 3) IRFS740B 10 * 6.3 * 40 * 450 10 13.4 5.5 Units V A A A V...300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2001 Fairchild Semico...
Description	400V N-Channel MOSFET
File Size	892.13K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRFL014N
OCR Text	... Max. 2.7 1.9 1.5 15 2.1 1.0 8.3 20 48 1.7 0.1 5.0 -55 to + 150 Units A W W mW/C V mJ A mJ V/ns C Thermal Resistance Parame...300s; duty cycle 2%. 2 www.irf.com IRFL014N 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOT...
Description	55V,1.9A, N-Channel HEXFET Power MOSFET(55V,1.9A,N沟道 HEXFET 功率MOS场效应管) 55V的，1.9AN沟道HEXFET功率MOSFET5V的，1.9A沟道的HEXFET功率马鞍山场效应管） Power MOSFET(Vdss=55V, Rds(on)=0.16ohm, Id=1.9A) Power MOSFET(Vdss=55V Rds(on)=0.16ohm Id=1.9A)
File Size	140.28K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRLL110 IRLL110TR
OCR Text	...ount application. S O T -2 2 3 Absolute Maximum Ratings Parameter ID @ Tc = 25C ID @ Tc = 100C IDM PD @Tc = 25C PD @TA = 25C Continu...300s; duty cycle 2%. 2 www.irf.com IRLL110 www.irf.com 3 IRLL110 4 www.irf....
Description	1.5 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.5A)
File Size	213.54K / 8 Page	View it Online	Download Datasheet

For 3-300s Found Datasheets File :: 11885 Search Time::2.672ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |