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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K7R321884M K7R323684M K7R323684M-FC16 K7R321884M-FC16
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| OCR Text |
...9j,10g,9f,10d,9c,9b,3b,3c,2d,3f,2g,3j,3l,3m,2n 1c,1d,2e,1g,1j,2k,1m,1n,2p data inputs q0-35 11p,10m,11l,11k,10j,11f,11e,10c,11b,9p,9n,10l 9k...bit sequential for both read and write operations, reguiring tow full clock bus cycles. any request ... |
| Description |
1Mx36 & 2Mx18 QDRTM II b4 SRAM
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| File Size |
197.54K /
18 Page |
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Samsung semiconductor
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| Part No. |
K7I323682C K7I321882C
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| OCR Text |
...,2d,3d,11d,3e,10e,11e,2f,3f 11f,2g,3g,11g,3j,10j,11j,3k,10k,11k,2l,3l,11l 3m,10m,11m,2n,3n,11n,3p,10p,11p data inputs outputs r/w 4a read, w...bit sequential for both read and write operations. synchronous pipe line read and late write enable ... |
| Description |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
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| File Size |
413.81K /
18 Page |
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it Online |
Download Datasheet |
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Samsung semiconductor
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| Part No. |
K7J323682C K7J321882C
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| OCR Text |
...9j,10g,9f,10d,9c,9b,3b,3c,2d,3f,2g,3j,3l,3m,2n 1c,1d,2e,1g,1j,2k,1m,1n,2p data inputs q0-35 11p,10m,11l,11k,10j,11f,11e,10c,11b,9p,9n,10l 9k...bit sequential for both read and write operations . synchronous pipeline read and late wr ite enable... |
| Description |
1Mx36 & 2Mx18 DDR II SIO b2 SRAM
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| File Size |
410.17K /
18 Page |
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Samsung semiconductor
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| Part No. |
K7K1636U2C K7K1618U2C
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| OCR Text |
...,2D,3D,11D,3E,10E,11E,2F,3F 11F,2G,3G,11G,3J,10J,11J,3K,10K,11K,2L,3L,11L 3M,10M,11M,2N,3N,11N,3P,10P,11P 4A 8A 7B,7A,5A,5B 2H,10H 11H 5F,7F...bit sequential for both read and write operations. Synchronous pipeline read and late write enable h... |
| Description |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
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| File Size |
415.85K /
19 Page |
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Samsung Electronic
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| Part No. |
KBE00S003M KBE00S003M-D411
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| OCR Text |
...p package memory which combines 2g bit nand flash memory(organized with two pieces of 1g bit nand flash memory) and 512mbit synchronous hi gh data rate dynamic ram.(organized with two pieces of 256mbit mobile sdram) 2gbit nand flash memor... |
| Description |
1Gb NAND*2 256Mb Mobile SDRAM*2
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| File Size |
1,809.86K /
86 Page |
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Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K7Q163664B-FC16 K7Q161864B-FC16
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| OCR Text |
...1j,11g,10e,11d,11c,3b,3c,2d, 3f,2g,3j,3l,3m,2n data inputs q 0-17 11p,10m,11l,11k,10j,11f,11e,10c,11b,2b,3d,3e, 2f,3g,3k,2l,3n,3p data outpu...bit sequential for both read and write operations, reguiring tow full clock bus cycles . any request... |
| Description |
512Kx36 & 1Mx18 QDR TM b4 SRAM
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| File Size |
347.73K /
17 Page |
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Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
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| Part No. |
K7I161882B-FC16 K7I161882B-FC20 K7I161882B-FC25 K7I161882B-FC30 K7I163682B-FC30 K7I163682B K7I163682B-FC16 K7I163682B-FC20 K7I163682B-FC25
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| OCR Text |
...,2D,3D,11D,3E,10E,11E,2F,3F 11F,2G,3G,11G,3J,10J,11J,3K,10K,11K,2L,3L,11L 3M,10M,11M,2N,3N,11N,3P,10P,11P 4A 8A 7B,7A,5A,5B 2H,10H 11H 5F,7F...bit sequential for both read and write operations. Synchronous pipeline read and late write enable h... |
| Description |
512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM 512Kx36位，1Mx18位首席信息官b2DDRII的SRAM
GT 35C 35#16 PIN PLUG RTANG
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| File Size |
375.70K /
17 Page |
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it Online |
Download Datasheet |
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Price and Availability
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