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SEME-LAB[Seme LAB]
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Part No. |
D1016UK
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OCR Text |
...RPOSE SILICON DMOS RF FET 40W - 28v - 500MHz PUSH-PULL
FEATURES
* SIMPLIFIED AMPLIFIER DESIGN
J K
I
N
M
O
* SUITABLE FOR B...4a ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 1A 1 0.8 13 50 20:1 VGS = -5V f = 1MHz VGS = 0 VGS = 0 ... |
Description |
METAL GATE RF SILICON FET
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File Size |
49.45K /
4 Page |
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it Online |
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SEME-LAB[Seme LAB] TT electronics Semelab Limited
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Part No. |
D2017UK
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OCR Text |
...URPOSE SILICON DMOS RF FET 5W - 28v - 1GHz SINGLE ENDED
FEATURES
D ( 2 p ls )
E
* SIMPLIFIED AMPLIFIER DESIGN * SUITABLE FOR BROAD...4a 1 0.36 13 40 20:1 65
Typ.
Max. Unit
V 2 1 7 mA A V S dB % -- 20 11 1 pF pF pF
VGS(th) G... |
Description |
METAL GATE RF SILICON FET
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File Size |
36.58K /
2 Page |
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it Online |
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POLYFET[Polyfet RF Devices]
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Part No. |
L88016
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OCR Text |
...vs PIN F=500 MHZ; IDQ=0.4a; VDS=28v
40 18.00
100
CAPACITANCE VS VOLTAGE
L2B 1 DIE CAPACITANCE
35 16.00 30 Efficiency = 55%
10
Ciss Coss
25 20
14.00
1
Crss
12.00 15
0.1 0 5 10 15 20 25 30
10 0 0.5 1 1.5 2 2.5 3 ... |
Description |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
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File Size |
33.67K /
2 Page |
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it Online |
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