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    KBY00U00VA-B450

Samsung semiconductor
Part No. KBY00U00VA-B450
OCR Text ...nization - Memory Cell Array : (256m + 8M) x 16bit for 4Gb (512M + 16M) x 16bit for 8Gb DDP - Data Register : (2K + 64) x 16bit * Automatic Program and Erase - Page Program : (2K + 64)Word - Block Erase : (128K + 4K)Word * Page Read Operati...
Description MCP Specification

File Size 1,159.34K  /  92 Page

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    K4D553235F-GC33 K4D553235F-GC K4D553235F-GC25 K4D553235F-GC2A

Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4D553235F-GC33 K4D553235F-GC K4D553235F-GC25 K4D553235F-GC2A
OCR Text 256m GDDR SDRAM 256mbit GDDR SDRAM Revision 1.6 March 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY...
Description 256m GDDR SDRAM

File Size 383.59K  /  18 Page

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    K9K2G08U0A-F K9K2G08X0A-J K9K2G08X0A K9K2G08R0A K9K2G08U0A

SAMSUNG[Samsung semiconductor]
Part No. K9K2G08U0A-F K9K2G08X0A-J K9K2G08X0A K9K2G08R0A K9K2G08U0A
OCR Text ...cument Title FLASH MEMORY 256m x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1. Initial issue 1. Technical note is changed 2. Notes of AC timing characteristics are added 3. The description of Copy-back...
Description FLASH MEMORY

File Size 868.14K  /  38 Page

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    K9K2G08U0M-F K9K2G08U0M-V K9K2G08Q0M-P K9K2G08Q0M-Y K9K2G08U0M K9XXG08UXM-E K9XXG08UXM-K K9XXG08UXM-P K9XXG08UXM-Y K9XXG

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9K2G08U0M-F K9K2G08U0M-V K9K2G08Q0M-P K9K2G08Q0M-Y K9K2G08U0M K9XXG08UXM-E K9XXG08UXM-K K9XXG08UXM-P K9XXG08UXM-Y K9XXG16UXM-E K9XXG16UXM-K K9XXG16UXM-P K9XXG16UXM-Y K9K2G16Q0M-Y K9K2G16Q0M-P K9K2G08Q0M-PCB0 K9K2G08U0M-VCB0 K9K2G08U0M-FCB0 K9K2G08Q0M-YCB0
OCR Text 256m x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1. Initial issue 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. Value: 8mA -->4mA Draft Date Aug. 30.2001 Nov. 5.200...
Description 256m x 8 Bit / 128M x 16 Bit NAND Flash Memory

File Size 676.60K  /  39 Page

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    EDS2532EESL-75 EDS2532EESL-75-E

Elpida Memory
http://
Part No. EDS2532EESL-75 EDS2532EESL-75-E
OCR Text 256m bits SDRAM EDS2532EESL-75 (8M words x 32 bits) Specifications * Density: 256m bits * Organization 2M words x 32 bits x 4 banks * Package: 92-ball FBGA Lead-free (RoHS compliant) * Power supply: VDD, VDDQ = 1.8V 0.1V * Clock frequ...
Description 256m bits SDRAM

File Size 737.75K  /  50 Page

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    K4D551638D K4D551638D-TC K4D551638D-TC2A K4D551638D-TC33 K4D551638D-TC50 K4D551638D-TC36 K4D551638D-TC40 K4D551638D-TC45

Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4D551638D K4D551638D-TC K4D551638D-TC2A K4D551638D-TC33 K4D551638D-TC50 K4D551638D-TC36 K4D551638D-TC40 K4D551638D-TC45 K4D551638D-TC60
OCR Text 256m GDDR SDRAM 256mbit GDDR SDRAM 4M x 16Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM Revision 1.8 October 2003 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev 1...
Description 256mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
CABLE ASSEMBLY; 2.9mm MALE TO 2.9mm MALE; 40 GHz CABLE 56Mbit GDDR SDRAM内存

File Size 228.34K  /  18 Page

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    K4D553238F-GC33 K4D553238F-GC36 K4D553238F-GC2A K4D553238F K4D553238F-GC

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4D553238F-GC33 K4D553238F-GC36 K4D553238F-GC2A K4D553238F K4D553238F-GC
OCR Text 256m GDDR SDRAM 256mbit GDDR SDRAM Revision 1.3 March 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY...
Description 256mbit GDDR SDRAM 56Mbit GDDR SDRAM内存

File Size 307.09K  /  17 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. KBE00G003M-D411 KBE00G003M-D4110
OCR Text ... 512m bit(64mx8) nand flash*2 / 256m bit(8mx8x4banks) mobile sdram*2 revision history the attached datasheets are prepared and approved by samsung el ectronics. samsung electronics co., ltd. reserve the right to change the specifications...
Description NAND 512Mb*2 Mobile SDRAM 256mb*2 NAND闪存12Mb * 2移动SDRAM 256mb 2
SPECIALTY MEMORY CIRCUIT, PBGA107

File Size 1,254.33K  /  89 Page

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    M393B5670EH1 M392B5670EH1 K4B1G1646E M392B5270CH0 K4B2G0846B K4B2G0846C K4B1G0846E M393B5170EH1-CH9 M393B5170EH1-YF8 M39

Samsung semiconductor
http://
Part No. M393B5670EH1 M392B5670EH1 K4B1G1646E M392B5270CH0 K4B2G0846B K4B2G0846C K4B1G0846E M393B5170EH1-CH9 M393B5170EH1-YF8 M393B2873EH1 K4B2G1646B M471B5673EH1 M378B5673EH1 M378B5673FH0 M391B2873FH0 M391B5673FH0 M471B5673FH0 M393B5673FH0 M393B5173FH0 M393B2873FH0 M392B2873FH0 M392B5673FH0 M471B2873FHS M393B5673EH1 M393B1K70BH1 M393B1K70CH0 M393B2K70BM1 M393B2K70CM0 M393B4G70AH0 M393B5270BH1 M393B5270CH0 M393B5173EH1 M393B5670FH0 M471B2873EH1 M471B2874EH1 M391B2873EH1 M391B5673EH1 M392B1K70BM1 M392B1K70CM0 M392B1K73BM1 M392B1K73CM0 M392B2873EH1 M392B2G73AM0 M392B5673EH1 M392B5670FH0 M392B5170FM0 M392B5270BH1
OCR Text ...C(L)F7/F8/H9 MC(L)F7/F8/H9 Org. 256m x 4 128M x 8 64M x 16 256m x 4 128M x 8 256m x 4 128M x 8 256m x 4 128M x 8 512M x 4 256m x 8 128M x 16 512M x 4 256m x 8 512M x 4 256m x 8 512M x 4 256m x 8 512M x 4 256m x 8 1G x 4 512M x 8 1G x 4 512M...
Description DDR3 SDRAM Memory

File Size 514.91K  /  23 Page

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