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  2170.0 Datasheet PDF File

For 2170.0 Found Datasheets File :: 1543    Search Time::1.359ms    
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    CPL-WB-01D3

ST Microelectronics
STMicroelectronics
Part No. CPL-WB-01D3
OCR Text ...ng frequency range (824 mhz to 2170 mhz) low insertion loss (< 0.2 db) 26 db coupling factor high directivity high esd robustness (iec 61000-4-2 level 4) flip-chip package small footprint benefits very low profile lead-free packag...
Description Wide-band directional coupler with ISO port

File Size 163.06K  /  10 Page

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    Motorola Semiconductor Products
Part No. MRF7S21170H
OCR Text ...s with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for ...0.01% Probability on CCDF. Power Gain -- 16 dB Drain Efficiency -- 31% Device Output Signal PAR -- 6...
Description 2110?2170 MHz, 50 W Avg., 28 V Single W?CDMA Lateral N?Channel RF Power MOSFETs
From old datasheet system

File Size 416.88K  /  12 Page

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    CPL-WB-01C2

STMicroelectronics
Part No. CPL-WB-01C2
OCR Text ...isolation figure 4. directivity 2170 2035 1901 1766 1632 1497 1362 1228 1093 959 824 -0.3 -0.25 -0.2 -0.15 -0.1 -0.05 -0.0 f (mhz) db 2170 2035 1901 1766 1632 1497 1362 1228 1093 959 824 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -70 f (mhz) d...
Description Wide band directional coupler with ISO port

File Size 434.03K  /  8 Page

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    CPL-WB-00D3

STMicroelectronics
Part No. CPL-WB-00D3
OCR Text ...ng frequency range (824 mhz to 2170 mhz) low insertion loss (< 0.2 db) 34 db typical coupling factor high directivity (typical 25 db) high esd robustness (iec 61000-4-2 level 4) flip-chip package small footprint: 1300 x 1000 m bene...
Description Wide band directional coupler with ISO port

File Size 142.62K  /  8 Page

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    NXP Semiconductors N.V.
Part No. BLF6G22LS-40P BLF6G22L-40P
OCR Text ...t frequencies from 2110 mhz to 2170 mhz and 1805 mhz to 1880 mhz. [1] the performance is tested on the class ab demo board as depicted in...0.01 % probability on ccdf; carrier spacing 5 mhz. [3] test signal: 3gpp; test model 1; 64 dpch; pa...
Description Power LDMOS transistor BLF6G22LS-40P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;BLF6G22LS-40P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;

File Size 151.37K  /  16 Page

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    TriQuint Semiconductor, Inc.
Part No. AP502-PCB
OCR Text ...tm product features ? 2110 ? 2170 mhz ? 30 db gain ? +36 dbm p1db ? -55 dbc aclr @ 25 dbm wcdma linear power ? +12 v sin...0 ? , 50 ? unmatched fixture parameter units min typ max operational bandwidth mhz 2110 ? 217...
Description UMTS-band 4W HBT Amplifier Module UMTS的频瓦异质结双极晶体管放大器模块

File Size 385.83K  /  5 Page

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    MRF6S21050LR3 MRF6S21050LSR3

Freescale (Motorola)
Freescale Semiconductor, Inc
Part No. MRF6S21050LR3 MRF6S21050LSR3
OCR Text ...s with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s...0.01% Probability on CCDF. Power Gain -- 16 dB Drain Efficiency -- 27.7% IM3 @ 10 MHz Offset -- - 37...
Description RF Power Field Effect Transistors

File Size 423.80K  /  12 Page

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    MOTOROLA
Part No. MRF6S21050L
OCR Text ...s with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s...0.01% Probability on CCDF. Power Gain -- 16 dB Drain Efficiency -- 27.7% IM3 @ 10 MHz Offset -- - 37...
Description The MRF6S21050L is designed for W鈥揅DMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA,

File Size 429.79K  /  12 Page

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    MRF6S21060NR1

Freescale Semiconductor, Inc
Part No. MRF6S21060NR1
OCR Text ...s with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s...0.01% Probability on CCDF. Power Gain -- 15.5 dB Drain Efficiency -- 26% IM3 @ 10 MHz Offset -- - 37...
Description
File Size 613.86K  /  16 Page

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    MOTOROLA
Part No. MRF6S21060N
OCR Text ...s with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s...0.01% Probability on CCDF. Power Gain -- 15.5 dB Drain Efficiency -- 26% IM3 @ 10 MHz Offset -- - 37...
Description 2110鈥?170 MHz, 14 W Avg., 28 V, 2 x W鈥揅DMA Lateral N鈥揅hannel RF Power MOSFETs

File Size 613.88K  /  16 Page

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For 2170.0 Found Datasheets File :: 1543    Search Time::1.359ms    
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