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  2110-2170 Datasheet PDF File

For 2110-2170 Found Datasheets File :: 1365    Search Time::3ms    
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    Motorola
Part No. MHPA21010
OCR Text ...on Applications MHPA21010 2110-2170 MHz 10 W, 24 dB RF HIGH POWER LDMOS AMPLIFIER CASE 301AP-02, STYLE 3 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating DC Supply Voltage RF Input Power (Single Carrier CW) Sto...
Description MHPA21010 2110-2170 MHz, 10 W, 23.7 dB RF High Power LDMOS Amplifier

File Size 93.45K  /  2 Page

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    MRF21060L MRF21060 MRF21060LR3 MRF21060LSR3

Freescale Semiconductor, Inc
MOTOROLA
Part No. MRF21060L MRF21060 MRF21060LR3 MRF21060LSR3
OCR Text ... MRF21060LR3 MRF21060LSR3 2110 - 2170 MHz, 60 W, 28 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF21060LR3 CASE 465A - 06, STYLE 1 NI - 780S MRF21060LSR3 Table 1. Maximum Ratings Rating Drain- Sou...
Description RF Power Field Effect Transistors
2110??170 MHz, 60 W, 28 V Lateral N??hannel RF Power MOSFETs

File Size 373.40K  /  8 Page

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    MRF21060R3 MRF21060SR3 MRF21060

Freescale (Motorola)
Motorola, Inc
Part No. MRF21060R3 MRF21060SR3 MRF21060
OCR Text ...t = 60 W PEP, IDQ = 500 mA, f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz) Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz) 3rd Order Intermodulation Distortion...
Description 2170 MHz, 60 W, 28 V Lateral N–Channel RF Power MOSFET
RF Power Field Effect Transistors

File Size 547.55K  /  8 Page

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    MW6IC2240NBR1 MW6IC2240N MW6IC2240GNBR1

FREESCALE[Freescale Semiconductor, Inc]
Part No. MW6IC2240NBR1 MW6IC2240N MW6IC2240GNBR1
OCR Text ...ching that makes it usable from 2110 to 2170 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. Final Application * Typical 2 -Carrier W-CDMA Performance: ...
Description RF LDMOS Wideband Integrated Power Amplifiers

File Size 481.72K  /  16 Page

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    Motorola Semiconductor
Part No. MHL21336N
OCR Text ...ee Terminations MHL21336N 2110 - 2170 MHz 3.0 W, 31 dB RF LINEAR LDMOS AMPLIFIER CASE 301AP - 02, STYLE 1 Table 1. Absolute Maximum Ratings (TC = 25C unless otherwise noted) Rating DC Supply Voltage RF Input Power Storage Tempe...
Description RF Linear LDMOS Amplifier

File Size 138.20K  /  5 Page

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    PTFB211501F PTFB211501E

Infineon Technologies AG
Part No. PTFB211501F PTFB211501E
OCR Text 2110 - 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 - 2170 frequency band. Features include I/O matching, high gain, and t...
Description Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 ?2170 MHz

File Size 349.89K  /  12 Page

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    Motorola
Part No. MHPA21010
OCR Text ...on Applications MHPA21010 2110-2170 MHz 10 W, 23.7 dB RF HIGH POWER LDMOS AMPLIFIER Freescale Semiconductor, Inc... CASE 301AP-02, STYLE 3 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating DC Supply Voltage RF Input P...
Description The RF Line UMTS BAND RF LINEAR LDMOS AMPLIFIER
The RF Line UMTS BAND RF LINEAR LDMOS AMPLIFIER

File Size 323.07K  /  4 Page

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    Electronic Theatre Controls, Inc.
ETC[ETC]
N/A
Part No. SA2140AM
OCR Text 2110 ~ 2170 MHz Source Impedance (single ended)(1) Load Impedance (single ended)(1) Operating Temperature Range Amplitude Ripple within 2110 ~ 2170 MHz Attenuation: D.C. ~ 500 MHz 500 ~ 2025 MHz 2025 ~ 2050 MHz 2230 ~ 2260 MHz 2490 ~ 2550 M...
Description From old datasheet system
WCDMA, RF-Rx SAW Filter

File Size 78.88K  /  3 Page

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    B39212B4408P810

TDK Electronics
Part No. B39212B4408P810
OCR Text ...1880.0 mhz 15 36 db 2020.0 ... 2110.0 mhz 15 36 db 2110.0 ... 2170.0 mhz 42 47 db 2170.0 ... 2400.0 mhz 30 35 db 2400.0 ... 2500.0 mhz 28 33 db 2500.0 ... 2690.0 mhz 23 28 db 2690.0 ... 3830.0 mhz 22 27 db 4 july 23, 2014 b4408 1...
Description SAW Components SAW Duplexer

File Size 275.61K  /  14 Page

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    AP622

WJ Communication. Inc.
Part No. AP622
OCR Text ...tes over the frequency range of 2110 - 2170 MHz and is housed in a small, RoHScompliant, flange-mount package. The multi-stage amplifier module has a 28 dB gain, P1dB of 35dBm, and ACLR of -55dBc at +23 dBm output power for WCDMA applicatio...
Description UMTS-band 4W HBT Amplifier Module

File Size 187.07K  /  4 Page

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