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  20v 5a Datasheet PDF File

For 20v 5a Found Datasheets File :: 11253    Search Time::5.625ms    
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    IRG7PH30K10PBF IRG7PH30K10PBF-15

International Rectifier
Part No. IRG7PH30K10PBF IRG7PH30K10PBF-15
OCR Text ...ed Inductive Load Current Vge = 20v Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junctio...5a ICE = 18A ICE = 9.0A ICE (A) 20 15 10 5 0 0 2 4 6 8 10 12 14 16 18 5 10 VGE (V) 15...
Description INSULATED GATE BIPOLAR TRANSISTOR

File Size 319.22K  /  9 Page

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    IRG7PH30K10DPBF

International Rectifier
Part No. IRG7PH30K10DPBF
OCR Text ...d Inductive Load Current, Vge = 20v Diode Continous Forward Current Diode Continous Forward Current Diode Maximum Forward Current Maximum Po...5a ICE = 9.0A ICE = 18A 6 4 2 0 ICE = 4.5a ICE = 9.0A ICE = 18A 15 20 5 10 VGE (V)...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 435.24K  /  10 Page

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    IKW15N120T2 IKW15N120T208

Infineon Technologies AG
Part No. IKW15N120T2 IKW15N120T208
OCR Text ...e IGES gfs V C E = 0 V , V G E =20v V C E =20v, I C =15a 8 0.4 4.0 20 600 nA S 5.2 1.75 1.8 1.75 5.8 2.2 6.4 mA 1.7 2.1 2.2 2.2 1200 V Symbo...5a 1.0V 0.5V 0.0V 0C 50C 100C 150C IC=2A 10A TJ=175C 25C 0V 2V 4V 6V 8V 10V 12V 0A VGE, ...
Description Low Loss DuoPack : IGBT in 2nd generation TrenchStop technology

File Size 380.96K  /  15 Page

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    SKB02N12007 SKB02N120

Infineon Technologies AG
Part No. SKB02N12007 SKB02N120
OCR Text ...transfer characteristics (VCE = 20v) Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of jun...5a TJ=150C 4A 3A 2A 1A 0A 0V TJ=25C 3.0V 2.5V VF, FORWARD VOLTAGE IF, FORWARD CURRENT IF=4A...
Description Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

File Size 1,155.61K  /  13 Page

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    SGP02N12007 SGP02N120 SGD02N120 SGI02N120

Infineon Technologies AG
Part No. SGP02N12007 SGP02N120 SGD02N120 SGI02N120
OCR Text ...transfer characteristics (VCE = 20v) Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) Power Semiconductors 5 Rev. 2.3 Sep. 07 SGD02N120, td...
Description Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation

File Size 375.94K  /  13 Page

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    SGB02N12007 SGB02N120

Infineon Technologies AG
Part No. SGB02N12007 SGB02N120
OCR Text ...transfer characteristics (VCE = 20v) Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) Power Semiconductors 5 Rev. 2_3 Jan 07 SGB02N120 td...
Description Fast IGBT in NPT-technology Lower Eoff compared to previous generation

File Size 433.31K  /  11 Page

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    CEM7350

Chino-Excel Technology
Part No. CEM7350
OCR Text ...250A VDS = 100V, VGS = 0V VGS = 20v, VDS = 0V VGS = -20v, VDS = 0V 100 1 100 -100 V A TA = 25 C unless otherwise noted Test Condition Mi...5a, VGS = -10V VDD = -50V, ID = -1A, VGS = -10V, RGEN = 22 14 8 60 20 16 3.5 5.0 -1.4 -1.6 30 20 120...
Description Dual Enhancement Mode Field Effect Transistor (N and P Channel)

File Size 183.76K  /  7 Page

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    GTM
Part No. GU7805a
OCR Text ...10V, Io=500mA, Tj=25 : 7.5V Vin 20v, 5mA Io 1A, PD 7V 8V Vin Vin 25V, Io=500mA, Tj=25 : 12V, Io=500mA, Tj=25 : Io 1.5a, Tj=25 : Io 750mA, Tj=25 : 15W VO (Line Regulation) VO (Load Regulation) IQ IQ Vn RR VD Isc Ipk Vo / Tj Vin=10V,...
Description (GU78xxA) 3-TERMINAL POSITIVE VOLTAGE REGULATORS

File Size 234.43K  /  6 Page

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