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  200v s Datasheet PDF File

For 200v s Found Datasheets File :: 13980    Search Time::1.532ms    
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    Mitsubishi Electric Corporation
Part No. FK10KM-9
OCR Text ...v, v gs = 0v, f = 1mhz v dd = 200v, i d = 5a, v gs = 10v, r gen = r gs = 50 w i s = 5a, v gs = 0v channel to case i s = 10a, d is /d t = C100a/ m s v (br) dss v (br) gss i gss i dss v gs (th) r ds (on) v ds (on) ? y fs ? c iss c...
Description MITsUBIsHI Nch POWER MOsFET HIGH-sPEED sWITCHING UsE

File Size 63.93K  /  5 Page

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    AP2762S-A-HF AP2762S-A-HF-14

Advanced Power Electronics Corp.
Advanced Power Electron...
Part No. AP2762s-A-HF AP2762s-A-HF-14
OCR Text ...c q gs gate-source charge v ds =200v - 7 - nc q gd gate-drain ("miller") charge v gs =10v - 13 - nc t d(on) turn-on delay time 3 v dd =200v ...s =6a, v gs =0v - - 1.5 v t rr reverse recovery time 3 i s =6a, v gs =0 v , - 475 - ns q rr reverse...
Description N-CHANNEL ENHANCEMENT MODE POWER MOsFET
Fast switching Characteristics

File Size 55.24K  /  4 Page

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    FDP44N25

Fairchild Semiconductor
Part No. FDP44N25
OCR Text ... ds = 250v, v gs = 0v v ds = 200v, t c = 125 c -- -- -- -- 1 10 a a i gssf gate-body leakage current, forward v gs = 30v, v ds = 0v...s dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz -- 2210 2870 p...
Description 250V N-Channel MOsFET

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    HFA16TA60CS HFA16TA60CSTRL HFA16TA60CSTRR

IRF[International Rectifier]
Part No. HFA16TA60Cs HFA16TA60CsTRL HFA16TA60CsTRR
OCR Text ...VR RatedD Rated see Fig. 3 VR = 200v Measured lead to lead 5mm from package body Dynamic Recovery Characteristics (per Leg) @ TJ = 25C (u...s, VR = 30V ns TJ = 25C TJ = 125C IF = 8A TJ = 25C A TJ = 125C VR = 200v TJ = 25C nC TJ = 125C dif/d...
Description 600V 16A HEXFRED Common Cathode Diode in a D2-Pak (HEXFRED) package
HEXFREDTM Ultrafast, soft Recovery Diode

File Size 163.58K  /  6 Page

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    Directed Energy
Part No. PVM-4210
OCR Text ...0v 10ns/div horizontal scale, 200v/div vertical scale typical differential output, 950v 2.5 s /div horizontal scale, 318v/div vertical scale, center horizontal trace is ground 20khz frequency, both channels 25 s /div horizo...
Description DUAL OUTPUT HIGH VOLTAGE PULsE GENERATOR MODULE

File Size 149.63K  /  2 Page

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    FK10SM-9

Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Part No. FK10sM-9
OCR Text ... Reverse recovery time VDD = 200v, ID = 5A, VGs = 10V, RGEN = RGs = 50 Is = 5A, VGs = 0V Channel to case Is = 10A, dis/dt = -100A/s PERFORMANCE CURVEs POWER DIssIPATION DERATING CURVE 200 POWER DIssIPATION PD (W) DRAIN CURRENT ...
Description HIGH-sPEED sWITCHING UsE 10 A, 450 V, 0.92 ohm, N-CHANNEL, si, POWER, MOsFET

File Size 58.88K  /  5 Page

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    FK10SM-9

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FK10sM-9
OCR Text ... Reverse recovery time VDD = 200v, ID = 5A, VGs = 10V, RGEN = RGs = 50 Is = 5A, VGs = 0V Channel to case Is = 10A, dis/dt = -100A/s PERFORMANCE CURVEs POWER DIssIPATION DERATING CURVE 200 POWER DIssIPATION PD (W) DRAIN CURRENT ...
Description HIGH-sPEED sWITCHING UsE

File Size 52.96K  /  5 Page

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    FK10SM-12

POWEREX[Powerex Power Semiconductors]
Part No. FK10sM-12
OCR Text ... Reverse recovery time VDD = 200v, ID = 5A, VGs = 10V, RGEN = RGs = 50 Is = 5A, VGs = 0V Channel to case Is = 10A, dis/dt = -100A/s PERFORMANCE CURVEs POWER DIssIPATION DERATING CURVE 200 POWER DIssIPATION PD (W) DRAIN CURRENT ...
Description HIGH-sPEED sWITCHING UsE

File Size 58.35K  /  5 Page

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    FK10SM-12

Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FK10sM-12
OCR Text ... Reverse recovery time VDD = 200v, ID = 5A, VGs = 10V, RGEN = RGs = 50 Is = 5A, VGs = 0V Channel to case Is = 10A, dis/dt = -100A/s PERFORMANCE CURVEs POWER DIssIPATION DERATING CURVE 200 POWER DIssIPATION PD (W) DRAIN CURRENT ...
Description 20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 高速开关使
HIGH-sPEED sWITCHING UsE

File Size 52.47K  /  5 Page

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For 200v s Found Datasheets File :: 13980    Search Time::1.532ms    
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