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    Renesas Electronics, Corp.
Part No. HG76C/AD101421 HG76C/AD083731 HD6475378 HD6412312 HD6412322 HD6412320 HD6432199R
Description MCU AVR 16KB FLASH 8MHZ 64QFN 说明注意事项使用E6000/E8000仿真器（HS6000ELN01H）用户的网络适配器手仿真
Description Notes on Using LAN Adapter for E6000/E8000 Emulator (HS6000ELN01H) User＇s Manual/Emulator 说明注意事项使用E6000/E8000仿真器（HS6000ELN01H）用户的网络适配器手仿真
IC MCU AVR32 128kb FLASH 64-QFN 说明注意事项使用E6000/E8000仿真器（HS6000ELN01H）用户的网络适配器手仿真
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    STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. M29F100BB-45N1T M29F100BT-45N1T M29F100BT-70N1T M29F100BB90M1T M29F100BB90M3T M29F100BB90M6T M29F100BT90N6T M29F100BB120M1T M29F100BB-120M1T M29F100BB120M3T M29F100BB-120M3T M29F100BB120M6T M29F100BB-120M6T M29F100BB120N1T M29F100BB-120N1T M29F100BB120N3T M29F100BB-120N3T M29F100BB120N6T M29F100BB-120N6T M29F100BB45M1T M29F100BB-45M1T M29F100BB45M3T M29F100BB-45M3T M29F100BB45M6T M29F100BB-45M6T M29F100BB45N1T M29F100BB45N3T M29F100BB-45N3T M29F100BB45N6T M29F100BB-45N6T M29F100BB70M1T M29F100BB-70M1T M29F100BB70M3T M29F100BB-70M3T M29F100BB70M6T M29F100BB-70M6T M29F100BB70N1T M29F100BB-70N1T M29F100BB70N3T M29F100BB-70N3T M29F100BB70N6T M29F100BB-70N6T M29F100BB-90M1T M29F100BB-90M3T M29F100BB-90M6T M29F100BB90N1T M29F100BB-90N1T M29F100BB90N3T M29F100BB-90N3T M29F100BB90N6T M29F100BB-90N6T M29F100BT M29F100BT120M1T M29F100BT-120M1T M29F100BT120M3T M29F100BT-120M3T M29F100BT120M6T M29F100BT-120M6T M29F100BT120N1T M29F100BT-120N1T M29F100BT120N3T M29F100BT-120N3T M29F100BT120N6T M29F100BT-120N6T M29F100BT45M1T M29F100BT-45M1T M29F100BT45M3T M29F100BT-45M3T M29F100BT45M6T M29F100BT-45M6T M29F100BT45N1T M29F100BT45N3T M29F100BT-45N3T M29F100BT45N6T M29F100BT-45N6T M29F100BT70M1T M29F
Description 1 Mbit 128kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory 1兆位28KBx84Kbx16，有启动区域的单电源闪存
8-Bit, 0.1 us MDAC, Parallel Input, Fast Control Signalling for DSP, Easy Micro Interface 20-PLCC -25 to 85 1兆位28KB x84Kb的x16插槽，启动座单电源闪
Octal Magnitude Comparators 24-SOIC 0 to 70 1兆位28KB x84Kb的x16插槽，启动座单电源闪
1 Mbit 128kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory 1兆位128kbx84Kbx16，有启动区域的单电源闪存
Quadruple 2-Input Positive-NAND Gate 14-VQFN -40 to 85 1兆位28KB x84Kb的x16插槽，启动座单电源闪
Dual 4-Bit D-Type Edge-Triggered Flip-Flops 24-SOIC 0 to 70 1兆位28KB x84Kb的x16插槽，启动座单电源闪
Octal Magnitude Comparators 24-PDIP 0 to 70
Dual 4-Bit D-Type Edge-Triggered Flip-Flops 24-PDIP 0 to 70
8-Bit, 0.1 us MDAC, Parallel Input, Fast Control Signalling for DSP, Easy Micro Interface 16-PDIP 0 to 70
Quadruple 2-Input Exclusive-OR Gates 14-SOIC 0 to 70
Quadruple 2-Input Exclusive-OR Gates 14-PDIP 0 to 70
8-Bit, 0.1 us MDAC, Parallel Input, Fast Control Signalling for DSP, Easy Micro Interface 20-PLCC 0 to 70
8-Bit, 0.1 us MDAC, Parallel Input, Fast Control Signalling for DSP, Easy Micro Interface 16-PDIP -40 to 85
8-Bit, 0.1 us Dual MDAC, Parallel Input, Fast Control Signalling for DSP, Easy Micro I/F 20-SOIC 0 to 70
8-Bit, 0.1 us MDAC, Parallel Input, Fast Control Signalling for DSP, Easy Micro Interface 16-TSSOP 0 to 70
8-Bit, 5 us Quad DAC, Parallel Input, Single / Dual Supply 20-LCCC -55 to 125
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    M29F010B120K1 M29F010B90K1 M29F010B90K1E M29F010B90K1F M29F010B90K1T M29F010B90K3 M29F010B90K3E M29F010B90K3F M29F010B90

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
Part No. M29F010B120K1 M29F010B90K1 M29F010B90K1E M29F010B90K1F M29F010B90K1T M29F010B90K3 M29F010B90K3E M29F010B90K3F M29F010B90K3T M29F010B90K6 M29F010B90K6E M29F010B90K6F M29F010B90P6T 29F010 M29F010 M29F010B M29F010B120K1E M29F010B120K1F M29F010B120K1T M29F010B120K3 M29F010B120K3E M29F010B120K3F M29F010B120K3T M29F010B120K6 M29F010B120K6E M29F010B120K6F M29F010B120K6T M29F010B120N1E M29F010B120N1F M29F010B120N1T M29F010B120N3 M29F010B120N3E M29F010B120N3F M29F010B120N3T M29F010B120N6 M29F010B120N6E M29F010B120N6F M29F010B120N6T M29F010B120P1T M29F010B120P3T M29F010B120P6T M29F010B45K1 M29F010B45K1E M29F010B45K1F M29F010B45K1T M29F010B45K3 M29F010B45K3E M29F010B45K3F M29F010B45K3T M29F010B45K6 M29F010B45K6E M29F010B45K6F M29F010B45K6T M29F010B45N1 M29F010B45N1E M29F010B45N1F M29F010B45N1T M29F010B45N3 M29F010B45N3E M29F010B45N3F M29F010B45N3T M29F010B45N6 M29F010B45N6E M29F010B45N6F M29F010B45N6T M29F010B45P1T M29F010B45P3T M29F010B45P6T M29F010B70K1 M29F010B70K1E M29F010B70K1F M29F010B70K1T M29F010B70K3 M29F010B70K3E M29F010B70K3F M29F010B70K3T M29F010B70K6 M29F010B70K6E M29F010B70K6F M29F010B70K6T M29F010B70N1 M29F010B70N1E M29F010B70N1F M29F010B70N1T M29F010B70N3 M29F010B70N3E M29F010
Description 1 Mbit 128kb x8, Uniform Block Single Supply Flash Memory 1兆位28KB × 8，统一座单电源闪存
JFET-Input Low Power High Drive Dual Operational Amplifier 8-CDIP -55 to 125 1兆位28KB × 8，统一座单电源闪存
Multi-Digit 7-Segment Display; Number of Digits/Alpha:4; Display Technology:LCD; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes 1兆位28KB × 8，统一座单电源闪存
LCD Display Panel; No. of Digits/Alpha:320; Display Technology:LCD; Leaded Process Compatible:Yes RoHS Compliant: Yes
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    Renesas Electronics Corporation.
Renesas Electronics, Corp.
Part No. M38030F2L-XXXHP M38030F2L-XXXKP M38030F2L-XXXSP M38030F2L-XXXWG M38030MAL-XXXWG M38030MAL-XXXKP M38030FAL-XXXSP M38031FAL-XXXHP M38030FAL-XXXWG M38030MAL-XXXHP M38030FAL-XXXKP M38031FAL-XXXKP M38030FAL-XXXHP M38031FAL-XXXSP M38031FAL-XXXWG M38030MAL-XXXSP M38030F3L-XXXHP M38030F3L-XXXWG M38030M3L-XXXKP M38030F3L-XXXSP M38030F3L-XXXKP M38030M3L-XXXHP M38030FBL-XXXWG M38030MBL-XXXHP M38030FBL-XXXHP M38030FBL-XXXSP M38030MBL-XXXKP M38030M2L-XXXHP M38030M2L-XXXKP M38030M2L-XXXSP M38030M2L-XXXWG M38031F2L-XXXHP M38031F2L-XXXKP M38031F2L-XXXSP M38031F2L-XXXWG M38030FB-XXXHP M38031FBL-XXXSP M38035MBL-XXXSP M38038FBL-XXXSP M38039FBL-XXXSP M38030MBL-XXXSP M38036MBL-XXXSP M38037FBL-XXXSP M38037MBL-XXXSP M38036FBL-XXXSP M38038MBL-XXXSP M38031FC-XXXHP M38031FC-XXXKP M38031FC-XXXWG M38031FCL-XXXHP M38031FCL-XXXKP M38031FCL-XXXSP M38031FCL-XXXWG M38031F5-XXXKP M38031F5-XXXSP M38031F5-XXXWG M38031F5L-XXXHP M38031F5L-XXXKP M38031F5L-XXXSP M38031F5L-XXXWG M38030F1-XXXHP M38030F1-XXXKP M38030F1-XXXSP M38030F1-XXXWG M38030F1L-XXXHP M38030F1L-XXXKP M38030F1L-XXXSP M38030F1L-XXXWG M38031F1-XXXKP M38031F1-XXXWG M38031F1L-XXXHP M38031F1L-XXXKP M38031F6-XXXHP M38031F6-XXXKP M38031F6-XXXSP M38031F6-XXXWG M
Description 256 Kbit (32K x 8) nvSRAM; Organization: 32Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 256 Kb; Package: SOIC
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: 0 to 70 C
256K (32K x 8) Static RAM; Density: 256 Kb; Organization: 32Kb x 8; Vcc (V): 4.50 to 5.50 V;
Three-PLL General Purpose FLASH Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 1 MHz to 166 MHz; Output Range: 1 MHz to 200 MHz; Outputs: 6
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 256; Vcc (V): 3.3; fMax (MHz): 66; tPD (ns): 12
8-Mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V;
9-Mbit (256K x 36/512K x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
18-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
Four Output PCI-X and General Purpose Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 140 MHz; Outputs: 4; Operating Range: 0 to 70 C
18-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 2.4 to 2.6 V
4-Mbit (512K x 8) Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 4.50 to 5.50 V;
4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 2.20 to 3.60 V;
64K x 16 Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V;
1-Mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 4.5 to 5.5 V;
9-Mbit (256K x 36/512K x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
1-Mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V;
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP
16-Mbit (1M x 16 / 2M x 8) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 4.50 to 5.50 V;
4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with SEM, INT, BUSY; Density: 128 Kb; Organization: 8Kb x 16; Vcc (V): 4.5 to 5.5 V; Speed: 35 ns
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 2.4 to 2.6 V
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V
8-Mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 4.50 to 5.50 V;
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
256K x 16 Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 4.5 to 5.5 V;
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM; Architecture: Standard Sync, Pipeline DCD; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V
4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V;
8-Mbit (1024K x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V;
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
256K x 16 Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V;
8-Mbit (1M x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V;
3.3V Zero Delay Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 8; Operating Range: -40 to 85 C
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: -40 to 85 C
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
512K x 8 Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 4.5 to 5.5 V;
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 2.4 to 2.6 V
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: -40 to 85 C
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: -40 to 85 C
2M x 8 Static RAM; Density: 16 Mb; Organization: 2Mb x 8; Vcc (V): 3.0 to 3.6 V;
16 Mbit (512K X 32) Static RAM; Density: 16 Mb; Organization: 512Kb x 32; Vcc (V): 3.0 to 3.6 V;
3.3V Zero Delay Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 8; Operating Range: 0 to 70 C
8-Mbit (1M x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 3.0 to 3.6 V;
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 6
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128kb x 16; Vcc (V): 3.0 to 3.6 V;
16-Mbit (1M x 16) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V;
4-Mbit (256K x 18) Pipelined DCD Sync SRAM; Architecture: Standard Sync, Pipeline DCD; Density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V
512K (32K x 16) Static RAM; Density: 512 Kb; Organization: 32Kb x 16; Vcc (V): 3.0 to 3.6 V;
4-Mbit (128K x 36) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 4 Mb; Organization: 128kb x 36; Vcc (V): 3.1 to 3.6 V
1M x 16 Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V;
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: 0 to 70 C
MoBL(R) 2 Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128kb x 16; Vcc (V): 2.20 to 3.60 V;
Rambus(R) XDR(TM) Clock Generator; VDD: 2.5 V; Input Frequency: 100 MHz to 133 MHz; Output Frequency: 300 MHz to 800 MHz; # Out: 4
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128kb x 16; Vcc (V): 2.20 to 3.60 V;
4-Mbit (128K x 36) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 4 Mb; Organization: 128kb x 36; Vcc (V): 3.1 to 3.6 V
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 167; tPD (ns): 7
2.5V or 3.3V, 200-MHz, 1:10 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 10; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 100; tPD (ns): 7
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 7
18-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V
Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
Spread Spectrum Clock Generator; Voltage(V): 3.3 V; Input Frequency Range: 25 MHz to 100 MHz; Output Frequency Range: 25 MHz to 100 MHz; Operating Range: 0 to 70 C; Package: SOIC
Low Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 143; tPD (ns): 9 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 154; tPD (ns): 6 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 100; tPD (ns): 9 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 128; Vcc (V): 3.3; fMax (MHz): 83; tPD (ns): 10 单芯位CMOS微机
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 6 单芯位CMOS微机
Three-PLL General-Purpose EPROM Programmable Clock Generator; Voltage (V): 3.3/5.0 V; Input Range: 1 MHz to 30 MHz; Output Range: .077 MHz to 100 MHz; Outputs: 6 单芯位CMOS微机
8-Mbit (512K x 16) MoBL(R) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
High Speed Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 110 MHz; Outputs: 8; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V SDRAM Buffer for Mobile PCs with 4 SO-DIMMs; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 100 MHz; Outputs: 10; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: -40 to 85 C 单芯位CMOS微机
Programmable Skew Clock Buffer; Voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating Range: -40 to 85 C 单芯位CMOS微机
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128kb x 16; Vcc (V): 3.0 to 3.6 V; 单芯位CMOS微机
MoBL(R) 1 Mbit (128K x 8) Static RAM; Density: 1 Mb; Organization: 128kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
18-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
1-Mbit (128K x 8) Static RAM; Density: 1 Mb; Organization: 128kb x 8; Vcc (V): 4.50 to 5.50 V; 单芯位CMOS微机
4-Mbit (256K x 18) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
2-Mbit (64K x 32) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 2 Mb; Organization: 64Kb x 32; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
200-MHz Field Programmable Zero Delay Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 10 MHz to 200 MHz; Outputs: 12; Operating Range: -40 to 85 C 单芯位CMOS微机
2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
2-Mbit (256K x 8) Static RAM; Density: 2 Mb; Organization: 256Kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯8位CMOS微机
Very Low Jitter Field and Factory Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 10 MHz to 133 MHz; Output Range: 20 MHz to 200 MHz; Outputs: 2 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 5; Operating Range: -40 to 85 C 单芯位CMOS微机
Three-PLL General Purpose FLASH Programmable Clock Generator; Voltage (V): 3.3 V; Input Range: 1 MHz to 166 MHz; Output Range: 0 MHz to 200 MHz; Outputs: 3 单芯位CMOS微机
1:8 Clock Fanout Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 350 MHz; Outputs: 8; Operating Range: -40 to 85 C 单芯位CMOS微机
Quad PLL Clock Generator with 2-Wire Serial Interface; Voltage (V): 2.5/3.3 V; Input Range: 27 MHz to 27 MHz; Output Range: 4.2 MHz to 166 MHz; Outputs: 5 单芯位CMOS微机
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: 0 to 70 C 单芯位CMOS微机
3.3V Zero Delay Clock Buffer; Voltage (V): 3.3 V; Frequency Range: 10 MHz to 133 MHz; Outputs: 9; Operating Range: 0 to 70 C 单芯位CMOS微机
High Speed Multi-phase PLL Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 24 MHz to 200 MHz; Outputs: 11; Operating Range: 0 to 70 C 单芯位CMOS微机
2.5V or 3.3V, 200-MHz, 1:18 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 18; Operating Range: -40 to 85 C 单芯位CMOS微机
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 位AVR微控制器具有8K字节的系统内可编程闪
2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; Voltage (V): 2.5/3.3 V; Frequency Range: 0 MHz to 200 MHz; Outputs: 12; Operating Range: 0 to 70 C
1:8 Clock Fanout Buffer; Voltage (V): 3.3 V; Frequency Range: 0 MHz to 350 MHz; Outputs: 8; Operating Range: 0 to 70 C
Spread Spectrum Clock Generator; Voltage(V): 3.3 V; Input Frequency Range: 4 MHz to 32 MHz; Output Frequency Range: 4 MHz to 32 MHz; Operating Range: 0 to 70 C; Package: SOIC
High Speed Low Voltage Programmable Skew Clock Buffer; Voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 110 MHz; Outputs: 8; Operating Range: 0 to 70 C
5V, 3.3V, ISR(TM) High-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 100; tPD (ns): 9
File Size 1,602.57K  /  119 Page

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    STMicroelectronics N.V.
意法半导
ST Microelectronics
Part No. M295V100B M29F100-B70M1R M29F100-B70M6R M29F100-B70M3R M295V100-B70M6R M29F100-B70N1R M29F100-B70N3R M295V100-B70N3R M29F100-B70M3TR M295V100-B70N1R M29F100-B70M1TR M295V100-B70M1R M29F100-B70N6R M295V100-B70M3R M295V100-B70N6R M29F100-T70N6R M295V100-T70M1R M29F100-T70N3R M295V100-T70N6R M29F100-T70N1R M295V100-T70M6R M29F100-B90M3R M295V100-B90M6R M295V100-B90N6R M29F100-B90N1TR M29F100-B90N1R M29F100-B90XM1R M29F100-T70M6R M295V100-B90M3R M29F100-T70M3R M295V100-T70M3R M295V100-T70N1R M29F100-B90N6R M295V100-B90N1R M295V100-B90N3R M29F100-B90M1TR M29F100-B90M3TR M295V100-T70N3R M29F100-B90M1R M295V100-B90M1R M29F100-T70M1R M29F100-B90N6TR M29F100-B90N3R M29F100-B90M6R M29F100-B90N3TR M29F100-T70M3TR M29F100-T90N1R M29F100-T90XM3R M295V100-T90M1R M29F100-T90N1TR M295V100-T90M3R M29F100-T90N3TR M29F100-T70N6TR M29F100-T90N6TR M29F100-T90M3R M29F100-T90M6R M295V100-T90M6R M29F100-T90M1TR M29F100-T70N3TR M295V100-T90N6R M295V100-T90N1R M29F100-T90N3R M29F100-T90M1R M29F100-T70M1TR M29F100-T70M6TR M29F100-T70N1TR M29F100-T70XM1R M29F100-T90N6R M295V100-T90N3R M29F100-T90M3TR M29F100-T90M6TR M29F100-T90XM1R M29F100B M295V100-T70XM1R M295V100-B70XM1R M295V100-B120M1R M295V100-B120XM1R
Description 8-Bit, 5 us Quad DAC, Parallel Input, Single / Dual Supply 20-PDIP -40 to 85
Hex 2-Input OR Drivers 20-SOIC 0 to 70
16-bit ES-PWM with 7-bit Device Level Brightness Control 32-QFN -40 to 85
16-Channel LED Driver w/DOT Correction &amp; Grayscale PWM Control &amp; No Delay 28-HTSSOP -40 to 85 1兆位28KB x84Kb的x16插槽，启动座单电源闪
8-Bit, 5 us Quad DAC, Parallel Input, Single / Dual Supply 20-PDIP 0 to 70 1兆位28KB x84Kb的x16插槽，启动座单电源闪
16-Bit Constant-Current LED Sink Driver 24-SSOP/QSOP 1兆位28KB x84Kb的x16插槽，启动座单电源闪
Synchronous 8-Bit Up/Down Counters 24-SOIC 0 to 70 1兆位28KB x84Kb的x16插槽，启动座单电源闪
8-Bit, 5 us Quad DAC, Parallel Input, Single / Dual Supply 20-SOIC -40 to 85 1兆位28KB x84Kb的x16插槽，启动座单电源闪
1 Mbit 128kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory 1兆位128kbx84Kbx16，有启动区域的单电源闪存
1 Mbit 128kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory 1兆位28KBx84Kbx16，有启动区域的单电源闪存
8-Bit, 5 us Quad DAC, Parallel Input, Simultaneous Update, Binary Input Coding 24-SOIC -25 to 85 1兆位28KB x84Kb的x16插槽，启动座单电源闪
8-Bit, 5 us Quad DAC, Parallel Input, Simultaneous Update, Binary Input Coding 24-SOIC 0 to 70 1兆位28KB x84Kb的x16插槽，启动座单电源闪
16 Channel LED Driver with Dot Correction and Grayscale PWM Control 28-HTSSOP 1兆位28KB x84Kb的x16插槽，启动座单电源闪
16-Channel LED Driver w/EEprom DOT Correction &amp; Grayscale PWM Control 28-PDIP -40 to 85 1兆位28KB x84Kb的x16插槽，启动座单电源闪
16-Channel LED Driver w/EEprom DOT Correction &amp; Grayscale PWM Control 28-HTSSOP -40 to 85 1兆位28KB x84Kb的x16插槽，启动座单电源闪
8-Bit, 5 us Quad DAC, Parallel Input, Single / Dual Supply 20-SOIC 0 to 70 1兆位28KB x84Kb的x16插槽，启动座单电源闪
9-Bit Bus-Interface Flip-Flops With 3-State Outputs 24-SOIC 0 to 70 1兆位28KB x84Kb的x16插槽，启动座单电源闪
16-Channel LED Driver w/DOT Correction &amp; Grayscale PWM Control &amp; No Delay 32-QFN -40 to 85 1兆位28KB x84Kb的x16插槽，启动座单电源闪
16-bit ES-PWM with 7-bit Device Level Brightness Control 28-HTSSOP -40 to 85 1兆位28KB x84Kb的x16插槽，启动座单电源闪
Hex 2-Input AND Drivers 20-PDIP 0 to 70
16-Channel 12-bit PWM with 7-bit Dot Correction 28-HTSSOP -40 to 85
16-Channel, 12-Bit PWM LED Driver with 6-Bit Dot Correction and Pre-Charge FET 28-HTSSOP -40 to 85
16-Channel 12-bit PWM with 7-bit Dot Correction 32-QFN -40 to 85
4.5-Bits, 0.003 kSPS ADC, Muxed BCD Output, True Differential Input, 1 Ch. 28-SOIC 0 to 70
16-Channel LED Driver w/DOT Correction 32-HTSSOP -20 to 85
Synchronous 8-Bit Up/Down Counters 24-PDIP 0 to 70
16-Channel LED Driver w/EEprom DOT Correction & Grayscale PWM Control 28-PDIP -40 to 85
KK 156 Hdr Assy RtAn Bkwy 5 ckt Tin
9-Bit Bus-Interface Flip-Flops With 3-State Outputs 24-PDIP 0 to 70
16-Channel LED Driver w/EEprom DOT Correction & Grayscale PWM Control 32-QFN -40 to 85
16-Channel LED Driver w/EEprom DOT Correction & Grayscale PWM Control 28-HTSSOP -40 to 85
16-Channel LED Driver w/DOT Correction & Grayscale PWM Control & No Delay 32-QFN -40 to 85
10-Bit Bus-Interface Flip-Flops With 3-State Outputs 24-SOIC 0 to 70
Hex 2-Input AND Drivers 20-SOIC 0 to 70
1 Mbit 128kb x8 or 64Kb x16 / Boot Block Single Supply Flash Memory
File Size 214.60K  /  30 Page

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    MF34M1-J8CATXX MF3257-J8CATXX MF31M1-J8CATXX MF32M1-J8CATXX MF365A-J8CATXX MF3129-J8CATXX MF3513-J8CATXX MF3129A-J8CATXX

Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
Part No. MF34M1-J8CATXX MF3257-J8CATXX MF31M1-J8CATXX MF32M1-J8CATXX MF365A-J8CATXX MF3129-J8CATXX MF3513-J8CATXX MF3129A-J8CATXX MF3513A-J8CATXX
Description 512Kb, 8/16-bit data bus compact flash card
8/16-bit Data Bus Static RAM Card
STATIC RAM CARDS
128kb, 8/16-bit data bus compact flash card
File Size 120.15K  /  16 Page

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    CAT25C256 CAT25C128

Catalyst Semiconductor
Part No. CAT25C256 CAT25C128
Description SPI Bus Serial EEPROM (Motorola Compatible), 256Kb, 3-bit Block Protection, WPEN Bit
SPI Bus Serial EEPROM (Motorola Compatible), 128kb, 2-bit Block Protection, WPEN Bit
File Size 77.74K  /  12 Page

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    M27C2001 M27C2001-10B1TR M27C2001-10B1X M27C2001-10B6TR M27C2001-10B6X M27C2001-10C1TR M27C2001-10C1X M27C2001-10C6TR M2

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. M27C2001 M27C2001-10B1TR M27C2001-10B1X M27C2001-10B6TR M27C2001-10B6X M27C2001-10C1TR M27C2001-10C1X M27C2001-10C6TR M27C2001-10C6X M27C2001-10F1TR M27C2001-10F1X M27C2001-10F6TR M27C2001-10F6X M27C2001-10L1TR M27C2001-10L1X M27C2001-10L6TR M27C2001-10L6X M27C2001-10N1TR M27C2001-10N1X M27C2001-10N6TR M27C2001-10N6X M27C2001-10XB1TR M27C2001-10XB1X M27C2001-10XB6TR M27C2001-10XB6X M27C2001-10XC1TR M27C2001-1 2383 M27C2001-20XF1TR M27C2001-20XF1X M27C2001-20XF6TR M27C2001-20XF6X M27C2001-12XC6TR M27C2001-12XC6X M27C2001-15XN1TR M27C2001-15XN1X M27C2001-25F6TR M27C2001-25F6X M27C2001-12XB1TR M27C2001-12XB1X M27C2001-12XB6TR M27C2001-12XB6X M27C2001-12XC1TR M27C2001-25N6TR M27C2001-25N6X M27C2001-15XN6TR M27C2001-15XN6X M27C2001-15XB1TR M27C2001-15XB1X M27C2001-15XC1TR M27C2001-15XC1X M27C2001-20L1TR M27C2001-20L1X M27C2001-20L6TR M27C2001-20L6X M27C2001-25B1TR M27C2001-25B1X M27C2001-20XB1TR M27C2001-20XB1X M27C2001-20XB6TR M27C2001-20XB6X M27C2001-20XC1TR M27C2001-20XC1X M27C2001-20XC6TR M27C2001-25XN1TR M27C2001-25XN1X M27C2001-25XN6TR M27C2001-25XN6X M27C2001-10XC6TR M27C200199 M27C2001-10XC6X M27C2001-12L1TR M27C2001-12L1X M27C2001-12L6TR M27C2001-12L6X M27C2001-70XC6TR M27C2001
Description    2 Mbit (256Kb x 8) UV EPROM and OTP EPROM
2 Mbit 256Kb x 8 UV EPROM and OTP EPROM
From old datasheet system
1 Mbit 128kb x8 UV EPROM and OTP EPROM
File Size 112.40K  /  16 Page

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    M27V102 M27V102-100B1TR M27V102-100B6TR M27V102-100F1TR M27V102-100F6TR M27V102-100K1TR M27V102-100K6TR M27V102-100N1TR

ST Microelectronics
意法半导
STMicroelectronics N.V.
Part No. M27V102 M27V102-100B1TR M27V102-100B6TR M27V102-100F1TR M27V102-100F6TR M27V102-100K1TR M27V102-100K6TR M27V102-100N1TR M27V102-100N6TR M27V102-120B1TR M27V102-120B6TR M27V102-120F1TR M27V102-120F6TR M27V102-120K1TR M27V102-120K6TR M27V102-120N1TR M27V102-120N6TR M27V102-150B1TR M27V102-150B6TR M27V102-150F1TR M27V102-150F6TR M27V102-150K1TR M27V102-150K6TR M27V102-150N1TR M27V102-150N6TR M27V102-200B1TR M27V102-200B6TR M27V102-200F1TR M27V102-200F6TR M27V102-200K1TR M27V102-200K6TR M27V102-200N1TR M27V102-200N6TR M27V102-90B1TR M27V102-90B6TR M27V102-90F1TR M27V102-90F6TR M27V102-90K1TR M27V102-90K6TR M27V102-90N1TR M27V102-90N6TR 4718 M27V101-90N6TR -M27V102-100K1TR -M27V102-90N1TR -M27V102-90K1TR -M27V102-200K6TR
Description 1 Mbit 128kb x 8 Low Voltage UV EPROM and OTP EPROM
From old datasheet system
2.5-V/3.3-V 16-Bit Buffers/Drivers With 3-State Outputs 48-TSSOP -40 to 85
2.5-V/3.3-V 16-Bit Buffers/Drivers With 3-State Outputs 48-TVSOP -40 to 85 1兆位64Kb的16低压紫外线存储器和OTP存储
1 Mbit 64Kb x 16 Low Voltage UV EPROM and OTP EPROM 1兆位64Kb的16低压紫外线存储器和OTP存储
TEST SOCKET FOR TERMINAL BLOCK 1兆位64Kb的16低压紫外线存储器和OTP存储
JUMPER CROSS FOR TERMINAL BLOCK 1兆位64Kb的16低压紫外线存储器和OTP存储
2.5-V/3.3-V 16-Bit Buffers/Drivers With 3-State Outputs 48-SSOP -40 to 85
File Size 114.63K  /  15 Page

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    意法半导
STMicroelectronics N.V.
Part No. M36W108AT120ZM6T M36W108AB100ZM6T M36W108AT100ZM6T M36W108AB120ZM6T M36W108AB100ZM5T
Description Coaxial Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:FEP; Leaded Process Compatible:Yes RoHS Compliant: Yes
Low-Smoke Zero-Halogen (LSZH) Shipboard Precision Low-Loss Serial Analog & Digital Video Coax Cable; Coaxial RG/U Type:6; Impedance:75ohm; Conductor Size AWG:18; No. Strands x Strand Size:Solid RoHS Compliant: Yes
8 Mbit 1Mb x8, Boot Block Flash Memory and 1 Mbit 128kb x8 SRAM Low Voltage Multi-Memory Product 81兆8，启动块闪存1兆位128kb的x8 SRAM的低电压多媒体存储产
File Size 256.94K  /  36 Page

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