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  1021 Datasheet PDF File

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    STW55NE10

STMicroelectronics
Part No. STW55NE10
OCR Text ...TION ORIENTED CHARACTERIZATION 1 2 3 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Fea...021 Max. 4 0.027 Unit V A V DS > ID(o n) x R DS(on )ma x V GS = 10 V DYNAMIC Symbo l g f s (...
Description    N - CHANNEL 100V - 0.021ohm - 55A - TO247 STripFET POWER MOSFET

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    SYNERGY MICROWAVE CORPO...
Part No. FSW85150-50
OCR Text 1 of 7 ] features: ? exceptionally low phase noise ? interactive communication ? standard programming interface ? ultra w ide t uning range...021; 2,533,623 | pending: 60/493075; 60/501371 & 60/501790; 60/527957 & 60/528670; 60/563481; 60/56...
Description INTELLIGENT INTERACTIVE SYNTHESIZER

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    52484-0810

Molex Electronics Ltd.
Part No. 52484-0810
OCR Text ... resin nylon number of rows 1 packaging type bag panel mount no pitch - mating interface 2.00mm plating min - mating 0.9...021, ps-52484-022, ps-53358-001, ps-54111-001, ps-54111-002, ps-54452-006, ps-54452-007, ps-...
Description 2.0 W/B CONN. IDT REC. HSG ASSY

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    Vishay Dale
Part No. L-0603M0R10GWBS L-0805M2R00FBT0 L-1206M1R00FBT0 L-2010M1R00FBT0
OCR Text 1 document number: 60027 for technical questions, contact: thinfilm@vishay.com this document is subject to change without notice. the produ...021 0.53 1005 0.100 2.54 0.050 1.27 0.030 0.76 0.021 0.53 1020 0.100 2.54 0.200 5.08 0.030 0.76 0.01...
Description RES THNFLM 0603 0.1 OHM 2% 1/8W 300PPM MLD SMD - Bulk
RES THNFLM 0805 2 OHM 1% 1/5W 300PPM MLD SMD - Tape and Reel
RES THNFLM 1206 1 OHM 1% 1/3W 300PPM MLD SMD - Tape and Reel
RES THNFLM 2010 1 OHM 1% 1W 300PPM MLD SMD - Tape and Reel

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    BL0507

SHANGHAI BELLING CO., LTD.
Part No. BL0507
OCR Text ...stment operation Features 1 2 3 4 5 6 7 8 9 10 11 12 BL0507 24 23 22 21 20 19 18 17 16 15 14 13 KI1 KI0 CCS KI/O0 KI/O1 KI/O2...021-64850700 Fax 86-64852222 Zip.200233 BL0507 10,11 23,24, 1~6 14~21 7 22 13 9 OSC O/I KI0~KI7 ...
Description Infrared Remote Control Transmitter IC

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    EFA480B

List of Unclassifed Manufacturers
ETC
Part No. EFA480B
OCR Text ...5OC SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS2 Drain-Source Voltage 12V 8V Vds Gate-Source Voltage -8V -4V Vgs Drain Current Idss 1.4A Ids F...021 21.3 0.021 18.2 0.021 17.7 0.021 18.5 0.021 20.0 0.021 22.0 0.021 24.4 0.022 27.0 0.022 29.8 0.0...
Description Low Distortion GaAs Power FET

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    NE6501077

NEC[NEC]
ETC
Part No. NE6501077
OCR Text ...SIONS (UNIT: mm) 17.5 0.5 14.3 1.0 0.1 GATE SOURCE FEATURES * Class A operation * High output power: 39.5 dBm (typ) * High gain: 10.5 d...021 0.022 0.023 0.025 0.026 0.027 0.029 0.030 0.031 0.034 0.035 0.037 0.038 0.040 0.042 0.045 0.047 ...
Description 10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
10 W L S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

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    NE650103M

California Eastern Laboratories
ETC[ETC]
Part No. NE650103M
OCR Text ... 40.0 11.0 45 5.0 -2.5 4.0 7.0 -1.0 4.5 VDS = 2.5 V; VGS = 0 V VDS = 2.5 V; IDS = 23 mA Channel to Case f = 2.3 GHz, VDS = 10.0 V Rg = 100 ...021 0.019 0.021 0.021 0.022 0.022 0.024 0.023 0.025 0.023 0.025 0.025 0.025 0.026 0.026 0.025 0.028 ...
Description NECS 10 W L & S-BAND POWER GaAs MESFET

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    NEC Corp.
NEC[NEC]
Part No. NE5520279A-T1 NE5520279A
OCR Text ...URFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX * HIGH OUTPUT POWER: +32 dBm TYP 5.7 MAX. 0.60.15 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUT...021 0.022 0.022 0.021 0.021 0.020 0.020 0.019 0.018 0.017 0.016 0.015 0.015 0.014 0.013 0.012 0.011 ...
Description NECS 3.2 V 2 W L&S BAND MEDIUM POWER SILICON LD-MOSFET
NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET
NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

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