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0.28m Datasheet PDF File

For 0.28m Found Datasheets File :: 453 Search Time::1.453ms
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				SYNC-POWER[SYNC POWER Crop.]
Part No.	SPN4920S8TG SPN4920 SPN4920S8RG
OCR Text	...it V V A A A W /W 7.2 6.0 35 1.7 2.8 1.8 -55/150 -55/150 65 2007/ 07/ 17 Ver.2 Page 2 SPN4920 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25 Unless otherwise noted) Parameter Static Drain-Source Br...
Description	N-Channel Enhancement Mode MOSFET
File Size	205.72K / 8 Page	View it Online	Download Datasheet

				Taiwan Semiconductor Co... TSC[Taiwan Semiconductor Company, Ltd]
Part No.	TSM6866DCA TSM6866D
OCR Text	...PD Limit 20V 12 6.5 30 1.5 0.96 +150 - 55 to +150 Unit V V A A W o o C C Thermal Performance Parameter Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounte...
Description	20V Dual N-Channel MOSFET w/ESD Protected
File Size	151.28K / 4 Page	View it Online	Download Datasheet

				ZETEX[Zetex Semiconductors] Diodes Incorporated
Part No.	ZX5T849GTC ZX5T849G ZX5T849GTA
OCR Text	... j , T stg LIMIT 80 30 7 7 20 3.0 24 1.6 12.8 -55 to +150 UNIT V V V A A W mW/C W mW/C C THERMAL RESISTANCE PARAMETER Junction to ambient (a) Junction to ambient (b) SYMBOL R JA R JA VALUE 42 78 UNIT C/W C/W NOTES (a) For a device su...
Description	30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
File Size	117.39K / 6 Page	View it Online	Download Datasheet

				ZETEX[Zetex Semiconductors]
Part No.	ZXTN2007GTC ZXTN2007G ZXTN2007GTA
OCR Text	... j , T stg LIMIT 80 30 7 7 20 3.0 24 1.6 12.8 -55 to +150 UNIT V V V A A W mW/C W mW/C C THERMAL RESISTANCE PARAMETER Junction to ambient (a) Junction to ambient (b) SYMBOL R JA R JA VALUE 42 78 UNIT C/W C/W NOTES (a) For a device su...
Description	30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
File Size	116.68K / 6 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRLR2908PBF IRLU2908PBF
OCR Text	...rrent Max. 39 28 30 150 120 0.77 16 180 250 See Fig.12a,12b,15,16 2.3 -55 to + 175 300 (1.6mm from case ) Units A Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermal...
Description	HEXFET? Power MOSFET HEXFET㈢ Power MOSFET
File Size	318.57K / 12 Page	View it Online	Download Datasheet

				ETC
Part No.	P2804NVG
OCR Text	...0A N-Ch P-Ch N-Ch P-Ch 40 -40 1.0 -1.0 1.5 -1.5 2.5 -2.5 V MIN TYP MAX UNIT 1 AUG-19-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2804NVG SOP-8 Lead-Free VDS = 0V, VGS = 20V Gate-Body Leakage IGS...
Description	N- & P-Channel Enhancement Mode Field Effect Transistor
File Size	515.01K / 8 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AO6804
OCR Text	...ts V V A IDM PD TJ, TSTG 1.3 0.8 25 0.8 0.5 -55 to 150 W C TA=25C TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C ...
Description	Dual N-Channel Enhancement Mode Field Effect Transistor
File Size	135.02K / 4 Page	View it Online	Download Datasheet

				ETC List of Unclassifed Manufacturers
Part No.	P2804BVG ELECTRONICTHEATRECONTROLSINC.-P2804BVG
OCR Text	... 1A, VGS = 10V, RGEN = 6 VDS = 0.5V(BR)DSS, VGS = 10V, ID = 7.5A VGS = 0V, VDS = 10V, f = 1MHz 790 175 65 16 2.5 2.1 2.2 7.5 11.8 3.7 4.4 15 21.3 7.4 nS nC pF Turn-Off Delay Time2 Fall Time2 SOURCE-DRAIN DIODE RATINGS AND CHARACTE...
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
File Size	287.61K / 5 Page	View it Online	Download Datasheet

				Pan Jit International Inc.
Part No.	PJD12P03L
OCR Text	...+20 -12 -55 38 22 -5 5 to + 1 5 0 130 3 .3 50 U ni t s V V A A W O M a xi m um P o w e r D i s s i p a t i o n O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e Avalanche Energy wi th Si ngle Pulse ...
Description	30V P-Channel Enhancement Mode MOSFET
File Size	147.20K / 4 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AON3816
OCR Text	...2 4 4 20 2.4 1.5 -55 to 150 1.4 0.9 4 4 A W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C A A Symbol t 10s Stead...
Description	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
File Size	114.54K / 4 Page	View it Online	Download Datasheet

For 0.28m Found Datasheets File :: 453 Search Time::1.453ms
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