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NEC Corp. NEC[NEC] CEL[California Eastern Labs]
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| Part No. |
NE5510179A-T1 NE5510179A
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| OCR Text |
...2 dBm * SINGLE SUPPLY: 2.8 to 6.0 V * SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX
4.2 Max
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLIN...174.90 172.90 170.90 169.30 167.00 165.10 162.20 160.80 158.30 156.10 153.50 151.50 149.10 147.10 14... |
| Description |
3.5V的操作硅射频功率MOSFET1.9 GHz的输电功 3.5V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS 3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
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| File Size |
38.35K /
4 Page |
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NEC[NEC]
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| Part No. |
NE552R679A-T1A NE552R679A NE552R679A-T1
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| OCR Text |
0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
DESCRIPTION
The NE552R679A is an N-channel silicon p...174.7 174.6 173.8 173.2 172.3 171.4 170.7 169.9 168.9 168.6 167.6 167.1 166.2 165.4 164.7 163.8 163.... |
| Description |
3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
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| File Size |
59.39K /
9 Page |
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it Online |
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California Eastern Laboratories, Inc. CEL[California Eastern Labs]
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| Part No. |
NE67483B NE67400
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| OCR Text |
... WG = 280 m * GATE LENGTH: LG = 0.3 m
3.0 GA
16
2.0
12
DESCRIPTION
NEC's NE674 is a L to Ku Band low noise GaAs MESFET. This...174.5 179.4 174.4 169.1 162.3 156.9 151.1 143.5 138.2 131.0 123.7 116.9 108.3 100.7 91.9 MAG 3.091 3... |
| Description |
NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET 邻舍L降至Ku波段低噪声放大器N沟道功率GaAs MESFET
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| File Size |
103.82K /
7 Page |
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it Online |
Download Datasheet
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