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JIANGHAI[Jianghai Europe GmbH]
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Part No. |
CD297BB
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OCR Text |
...eakage current is not more than 0,01CV or 1,5mA, whichever is smaller C: Nominal Capacitance (F) V: Rated Voltage (V) Rated Voltage (V)
10 ...148 148 148 121 103 103 103 85 85 72 72 59 49 405 332 277 277 222 222 222 185 185 151 151 123 123 10... |
Description |
EC Snap-In 105∑C Extended Lifetime 7.000h High Ripple Currents(Snap-In)
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File Size |
838.82K /
5 Page |
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Infineon Technologies A... INFINEON[Infineon Technologies AG]
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Part No. |
CLY29-10 CLY29 CLY29-00 CLY29-05
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OCR Text |
...ration current VDS = 2 V, VGS = 0 V Gate threshold voltage VDS = 3 V, ID = 20 mA Drain current at pinch-off, low VDS VDS = 3 V, VGS = -3.8 V...148 0,55 21,7 6,248 114 0,0468 37 0,277 -152 0,58 21,3 5,881 109 0,0493 34 0,293 -155 0,59 20,8 5,53... |
Description |
HiRel C-Band GaAs Power-MESFET SMT CAP 10NF 50V 10% CERAMIC 0805
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File Size |
646.34K /
9 Page |
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it Online |
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CREE[Cree, Inc]
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Part No. |
CRF24010D
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OCR Text |
0 W SiC RF Power MESFET Die
Cree's CRF24010 is a silicon carbide (SiC) RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC...148.47 0.82907 / -149.93 0.82944 / -151.27 0.82996 / -152.51 0.83062 / -153.66 0.83139 / -154.73 0.8... |
Description |
10 W SiC RF Power MESFET Die
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File Size |
724.75K /
8 Page |
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it Online |
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CREE[Cree, Inc]
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Part No. |
CRF24010
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OCR Text |
0 W, SiC RF Power MESFET
Cree's CRF24010 is an unmatched silicon carbide (SiC) RF power MetalSemiconductor Field-Effect Transistor (MESFE...148.084 0.818 / -150.432 0.819 / -152.591 0.820 / -154.592 0.821 / -156.457 0.823 / -158.208 0.824 /... |
Description |
10 W, SiC RF Power MESFET
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File Size |
634.49K /
10 Page |
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it Online |
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Davicom Semiconductor ETC[ETC]
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Part No. |
DM8108
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OCR Text |
...th full-duplex capability, port 0 - 7 support 1.6Gbit/s aggregate bandwidth connections. The DM8108 also supports port trunking/load balanci...148,800 packets/sec. on each Ethernet port Direct support for packet buffering Glue-less interface w... |
Description |
8 port 10/100M Fast Ethernet Switching Controller
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File Size |
369.20K /
35 Page |
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it Online |
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EUDYNA[Eudyna Devices Inc]
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Part No. |
EGN35A180IV
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OCR Text |
...f=3.5GHz Channel to Case TBD -1.0 TBD
Limit Typ. Max.
-2.0 -350 53.0 50 12.0 0.65 -3.5 0.8
Unit
V V dBm % dB
oC/W
Edition 1.2 ...148.2 0.153 -169.3 0.221 -161.9 0.254 -167.2 0.234 -175.7 0.154 -178.9 0.079 -114.2 0.265 -81.4 0.50... |
Description |
High Voltage - High Power GaN-HEMT
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File Size |
103.92K /
4 Page |
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SEOUL[Seoul Semiconductor]
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Part No. |
FCW100Z
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OCR Text |
...proved by
SSC-QP-0401-06(REV.0)
SEOUL SEMICONDUCTOR CO,. LTD. 148-29 Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL: 82-2-3281-6269 FAX: 82-2-858-5537
FCW100Z Seoul Semiconductor
- 1/9 -
1. Features Package : 2.0 x 1.5 x 0.45 mm C... |
Description |
FLASH LED DEVICE
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File Size |
484.03K /
9 Page |
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it Online |
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Price and Availability
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