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  0.0067 Datasheet PDF File

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    2N6387-D

ON Semiconductor
Part No. 2N6387-D
OCR Text ... * * hFE = 2500 (Typ) @ IC = 4.0 Adc Collector-Emitter Sustaining Voltage - @ 100 mAdc VCEO(sus) = 60 Vdc (Min) -- 2N6387 = 80 Vdc (Min) -- 2N6388 Low Collector-Emitter Saturation Voltage -- VCE(sat) = 2.0 Vdc (Max) @ IC = 5.0 Adc -- 2N638...
Description Plastic Medium-Power Silicon Transistors

File Size 75.75K  /  9 Page

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    ONSEMI[ON Semiconductor]
Part No. 2N6387 2N6388 ON0090
OCR Text ...in -- hFE = 2500 (Typ) @ IC = 4.0 Adc * Collector-Emitter Sustaining Voltage - @ 100 mAdc VCEO(sus) = 60 Vdc (Min) -- 2N6387 VCEO(sus) = 80 Vdc (Min) -- 2N6388 * Low Collector-Emitter Saturation Voltage -- VCE(sat) = 2.0 Vdc (Max) @ IC = 5....
Description DARLINGTON NPN SILICON POWER TRANSISTORS
8 AND 10 AMPERE NPN SILICON
From old datasheet system

File Size 164.04K  /  6 Page

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    Central Semiconductor
Part No. 2N6387 2N6666 2N6388 2N6101
OCR Text 0 4.0 4.0 7.0 7.0 7.0 7.0 2N6040 2N6041 2N6042 10 10 10 10 10 16 2N6124 2N6125 2N6126 2N6132 2N6133 2N6134 2N6111 2N6109 2N6107 2N6666 2N6667 2N6668 2N6475 2N6476 2N6489 2N6490 2N6491 4.0 4.0 4.0 7.0 7.0 7.0 7.0 7.0 7.0 8.0 10 10 4.0 4.0 15...
Description Leaded Power Transistor Darlington
Leaded Power Transistor General Purpose

File Size 58.24K  /  2 Page

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    2N6395 2N6399 2N6394 2N6397

ONSEMI[ON Semiconductor]
Part No. 2N6395 2N6399 2N6394 2N6397
OCR Text ...Peak Gate Power (Pulse Width 1.0 s, TC = 90C) Forward Average Gate Power (t = 8.3 ms, TC = 90C) Forward Peak Gate Current (Pulse Width 1.0 s, TC = 90C) Operating Junction Temperature Range Storage Temperature Range *Indicates JEDEC Regist...
Description SILICON CONTROLLED RECTIFIERS

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    SEME-LAB[Seme LAB]
Part No. 2N6796LCC4
OCR Text 0.050) 1.07 (0.040) 9.14 (0.360) 8.64 (0.340) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 2.16 (0.085) N-CHANNEL POWER MOSFET VDSS = 100V = 7.4A 11 7.62 (0.300) 7.12 (0.280) 17 18 1 2 0.76 (0.030) 0.51 (0.020) 10 9 8 ...
Description N-Channel Power MOSFET(Vdss00VId(cont).4A,Rds(on).18ΩN沟道功率型MOS场效应管(Vdss00VId(cont).4A,Rds(on).18Ω

File Size 18.94K  /  2 Page

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    SemeLAB
Part No. 2N6796LCC4
OCR Text 0.050) 1.07 (0.040) 9.14 (0.360) 8.64 (0.340) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 2.16 (0.085) N-CHANNEL POWER MOSFET VDSS = 100V = 7.4A 11 7.62 (0.300) 7.12 (0.280) 17 18 1 2 0.76 (0.030) 0.51 (0.020) 10 9 8 ...
Description N-CHANNEL POWER MOSFET

File Size 25.13K  /  3 Page

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    INTERSIL[Intersil Corporation]
Part No. 2N6796 FN1594
OCR Text 0.180 Ohm, N-Channel Power MOSFET The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and driver...
Description 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET
From old datasheet system
8A, 100V, 0.180 Ohm, N-Channel Power MOSFET
8A 100V 0.180 Ohm N-Channel Power MOSFET

File Size 71.78K  /  7 Page

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    TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. 2N6796
OCR Text 0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) TMOS FET TRANSISTOR N - CHANNEL 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ...
Description TMOS FET TRANSISTOR N - CHANNEL

File Size 18.08K  /  2 Page

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    Central Semiconductor
Part No. 2N998 2N2865 2N917A 2N917
OCR Text ... 60 15 13 15 15 12 15 (V) MIN 3.0 3.0 3.0 15 2.5 3.0 2.0 2.5 2.5 2.5 (A) MAX 0.001 -0.01 0.01 0.01 0.01 0.02 0.01 0.02 0.01 15 -15 90 15 15 1.0 15 15 15 (V) hFE @ IC @ VCE (mA) (V) VCE (SAT) @ IC (V) MAX (mA) fT (MHz) MIN Co...
Description Leaded Small Signal Transistor General Purpose

File Size 66.03K  /  2 Page

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    SANYO
Part No. 2SA1352
OCR Text ...E(sat) VBE(sat) VCB=(-)150V, IE=0 VEB=(-)4V, IC=0 VCE=(-)40V, IC=(-)10mA VCE=(-)30V, IC=(-)10mA IC=(-)20mA, IC=(-)20mA, IB=(-)2mA IB=(-)2mA (-)200 (-)200 (-)5 1.7 (2.6) Cre VCB=(-)30V, f=1MHz 1.2 (1.7) 40 70 (-)0.6 (-)1.0 Conditions Ratings...
Description Ultrahigh-Definition CRT Display Video Output Applications

File Size 154.35K  /  5 Page

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