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Infineon Technologies A...
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| Part No. |
IPA60R280P7S
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| OCR Text |
...typ 18 nc i d,pulse 36 a e oss @400v 2.1 j body diode di/dt 900 a/s type/orderingcode package marking relatedlinks ipa60r280p7s pg-to 220 fullpak 60s280p7 see appendix a drain pin 2 gate pin 1 source pin 3
2 600vcoolmosap7power... |
| Description |
600V CoolMOSa P7 Power Transistor
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| File Size |
1,028.71K /
14 Page |
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Infineon Technologies A...
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| Part No. |
IPA60R280CFD7
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| OCR Text |
...p 18 nc i d,pulse 31 a e oss @ 400v 2.0 j body diode di f /dt 1300 a/s type/orderingcode package marking relatedlinks ipa60r280cfd7 pg-to 220 fullpak 60r280f7 see appendix a d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n ... |
| Description |
600V CoolMOSa CFD7 Power Transistor
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| File Size |
1,114.94K /
14 Page |
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Infineon Technologies A...
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| Part No. |
IHW40T60 IHW40T60-13
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| OCR Text |
...tand time 2) v ge = 15v, v cc ? 400v, t j ? 150 ? c t s c 5 ? s power dissipation t c = 25 ? c p t o t 303 w operating junction temperature t j -40...+175 ? c storage temperature t s t g -55...+150 soldering temperature, 1.6mm (0.063 in.) f... |
| Description |
IGBT in TRENCHSTOP technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
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| File Size |
577.35K /
13 Page |
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Infineon Technologies A...
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| Part No. |
IHW40N65R5
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| OCR Text |
... 1.47 - mj t vj =25c, v cc =400v, i c =40.0a, v ge =0.0/15.0v, r g(on) =10.0 w , r g(off) =10.0 w , l s =70nh, c s =30pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. g c e g c e
6... |
| Description |
high ruggedness and stable temperature behavior
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| File Size |
2,113.72K /
15 Page |
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Infineon Technologies A...
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| Part No. |
IHW40N65R5-15
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| OCR Text |
... 1.47 - mj t vj =25c, v cc =400v, i c =40.0a, v ge =0.0/15.0v, r g(on) =10.0 w , r g(off) =10.0 w , l s =70nh, c s =30pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. g c e g c e
6... |
| Description |
Reverse conducting IGBT with monolithic body diode
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| File Size |
2,078.64K /
15 Page |
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it Online |
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Infineon Technologies A...
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| Part No. |
IHW40N60R
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| OCR Text |
... 0.75 - mj t vj =25c, v cc =400v, i c =40.0a, v ge =0.0/15.0v, r g(on) =5.6 w , r g(off) =5.6 w , l s =90nh, c s =67pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. g c e g c e
6 i... |
| Description |
Reverse conducting IGBT
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| File Size |
2,019.82K /
15 Page |
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Infineon Technologies A...
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| Part No. |
IHW40N60RF-15
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| OCR Text |
... 0.56 - mj t vj =25c, v cc =400v, i c =40.0a, v ge =0.0/15.0v, r g(on) =5.6 w , r g(off) =5.6 w , l s =90nh, c s =67pf l s , c s fromfig.e energy losses include tail and diode reverse recovery. g c e g c e
6 i... |
| Description |
Powerful monolithic body diode with low forward voltage designed for soft commutation only
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| File Size |
1,989.07K /
15 Page |
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IXYS Corporation
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| Part No. |
IXGA16N60B2D1
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| OCR Text |
... 125C IC = 12A, VGE = 15V VCE = 400V, RG = 22 Note 2 Inductive load, TJ = 25C IC = 12A, VGE = 15V VCE = 400V, RG = 22 Note 2 IC = 12A, VGE = 15V, VCE = 0.5 * VCES IC = 12A, VCE = 10V, Note 1 VCE = 25V, VGE = 0V, f = 1MHz Characteristic Valu... |
| Description |
HiPerFAST IGBTs
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| File Size |
233.19K /
7 Page |
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List of Unclassifed Man...
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| Part No. |
CM501
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| OCR Text |
...ls: 70184627018 cm 501 3.55.3 400v 70184628230 cm 501 1.40.3 400v 70184628232 cm 501 5.55.3 400v 70184628233 cm 501 3.55.3 230/400v bi 70184628234 cm 501 1.40.3 230/400v bi 70184628235 cm 501 3.20.1 115v... |
| Description |
The CM501 block saw is designed for durability and high performance for onsite wet and dry cutting
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| File Size |
1,385.31K /
27 Page |
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it Online |
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Price and Availability
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