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500-1000v Datasheet PDF File

For 500-1000v Found Datasheets File :: 3823 Search Time::1.734ms
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				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	M52959FP M52959E
OCR Text	...0 80 70 60 50 40 30 20 10 0 400 500 600 700 800 900 1000 Wave length peak 880nm WAVE LENGTH (nm) MITSUBISHI (5/8) MITSUBISHI ICs(AV COMMON) M52959FP PSD ON CHIP DISTANCE DETECTION SIGNAL PROCESSOR Interface Ta=25C, V...
Description	PSD ON CHIP DISTANCE DETECTION SIGNAL PROCESSOR From old datasheet system
File Size	63.13K / 8 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT10021JLL
OCR Text	...Volts Amps 1000 37 0.210 100 500 3 5 100 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Volts 050-7017 Rev A 8-2001 Zero Gate Voltage Drain Current (VDS ...
Description	Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	56.69K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT10026JLL
OCR Text	...Volts Amps 1000 30 0.260 100 500 100 3 5 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Volts 050-7113 Rev - 9-2001 Zero Gate Voltage Drain Current (VDS ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	56.68K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT10026JN
OCR Text	... 4.5V 4V 0 100 200 300 400 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 100 TJ = -55C ID, DRAIN CURRENT (AMPERES) 80 TJ = +25C TJ = +125C 0 0 4V 0 5 10 15 2...
Description	POWER MOS IV 1000V 33A 0.26 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	63.50K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT10026L2LL
OCR Text	...Volts Amps 1000 38 0.260 100 500 100 3 5 (VDS > ID(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Volts 050-7024 Rev A 9-2001 Zero Gate Voltage Drain Current (VDS =...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	51.49K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technolo... Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT10043 APT10043JVR
OCR Text	... Volts Amps 1000 22 88 30 40 500 4 -55 to 150 300 13 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Te...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 1000V 22A 0.430 Ohm
File Size	73.54K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT10057WVR
OCR Text	... 165 16 13 59 8 7900 830 430 500 45 250 32 26 90 16 ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM...
Description	POWER MOS V 1000V 17.3A 0.570 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	58.75K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT10078BLL APT10078SLL
OCR Text	... Volts Amps 1000 14 0.78 100 500 100 3 5 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms A nA Volts 10-2001 050-7003 Rev B Zero Gate Voltage Drain Current (VDS...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	56.53K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT10086BVFR
OCR Text	... 10 4.5V 5 4V 0 100 200 300 400 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 30 0 10 4.5V 5 4V 0 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 0 RDS(ON)...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 13A 0.860 Ohm
File Size	68.65K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT10086BVR
OCR Text	... 10 4.5V 5 4V 0 100 200 300 400 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 30 0 10 4.5V 5 4V 0 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 0 RDS(ON)...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 13A 0.860 Ohm
File Size	65.94K / 4 Page	View it Online	Download Datasheet

For 500-1000v Found Datasheets File :: 3823 Search Time::1.734ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |